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KM41C16000CT-6

Description
Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
Categorystorage    storage   
File Size308KB,19 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41C16000CT-6 Overview

Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24

KM41C16000CT-6 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Objectid1536295699
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts26
Reach Compliance Codeunknown
ECCN codeEAR99
compound_id9956477
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G24
length17.14 mm
memory density16777216 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports2
Number of terminals24
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX1
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width7.62 mm
KM41C16000C, KM41V16000C
CMOS DRAM
16M x1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5 or -6), power consumption(Normal or Low power) and
package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 16Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low
power consumption and high reliability. It may be used as main memory unit for high level computer and microcomputer.
FEATURES
Part Identification
- KM41C16000C/C-L (5V, 4K Ref.)
- KM41V16000C/C-L (3.3V, 4K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast Parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Active Power Dissipation
Unit : mW
Speed
-5
-6
3.3V
324
288
5V
495
440
• Early Write Operation
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
Refresh Cycles
Part
NO.
C16000C
V16000C
V
CC
5V
3.3V
Refresh
cycle
4K
Refresh period
Normal
64ms
L-ver
128ms
RAS
CAS
W
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
VBB Generator
Data in
Refresh Timer
Refresh Control
Row Decoder
Sense Amps & I/O
Buffer
D
Performance Range
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
A0-A11
A0-A11
Refresh Counter
Row Address Buffer
Col. Address Buffer
Memory Array
16,777,216 x1
Cells
Data out
Column Decoder
Buffer
Q
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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