Ordering number : ENA1896A
SFT1443
N-Channel Power MOSFET
100V, 9A, 225m
Ω
, Single TP/TP-FA
Features
•
•
http://onsemi.com
ON-resistance RDS(on)1=180m
Ω
(typ.)
Halogen free compliance
•
•
Input Capacitance Ciss=490pF(typ.)
Protection diode in
•
4V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
100
±20
9
36
1
19
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-004
6.5
5.0
1.5
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-004
SFT1443-H
6.5
5.0
4
2.3
1.5
0.5
SFT1443-TL-H
7.0
5.5
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
5.5
7.0
0.85
0.5
1.2
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
2,4
Marking
(TP, TP-FA)
Packing Type (TP-FA) : TL
T1443
LOT No.
TL
Electrical Connection
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/D1510PA TKIM TC-00002450 No. A1896-1/9
SFT1443
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=9A, VGS=0V
VDS=50V, VGS=10V, ID=9A
See specified Test Circuit.
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=3A, VGS=10V
ID=1.5A, VGS=4.5V
ID=1.5A, VGS=4V
Ratings
min
100
1
±10
1.5
4
180
195
205
490
34
19
8
10
34
24
9.8
1.8
1.6
1.03
1.2
225
275
290
2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD=50V
10V
0V
VIN
PW=10μs
D.C.≤1%
G
D
ID=4.5A
RL=11.1Ω
VOUT
P.G
SFT1443
50Ω
S
Ordering Information
Device
SFT1443-H
SFT1443-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free and Halogen Free
No. A1896-2/9
SFT1443
9
8
7
ID -- VDS
Tc=-25
°
C
10
.
0V
8.0
V
10
ID -- VGS
VDS=10V
V
4.5
6.0
V
4.0V
9
8
Drain Current, ID -- A
.0
V
Drain Current, ID -- A
6
5
4
3
2
16
7
6
5
4
3.5V
0
VGS=2.5V
0
0.5
1.0
1.5
2.0
2.5
3.0
IT16177
0
0
0.5
1.0
1.5
2.0
2.5
3.0
25
°
3.5
1
1
Tc=
7
3.0V
2
C
--25
°
C
4.0
3
5
°
C
4.5
Drain-to-Source Voltage, VDS -- V
450
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
450
RDS(on) -- Tc
IT16178
Tc=25
°
C
ID=1.5A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
350
400
350
300
250
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
3.0A
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
A
3.0
I D=
,
.0V
=10
V GS
=4
GS
V
.0
=1
, ID
V
.5A
=
S
VG
.5A
=1
, ID
.5V
4
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
|
y
fs
|
-- ID
IT16179
10
7
5
3
2
Case Temperature, Tc --
°
C
IT16180
IS -- VSD
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
VGS=0V
25
°
C
Tc=7
5
°
C
25
°
C
0
0.2
0.4
0.6
0.01
7
5
3
2
0.8
1.0
1.2
IT16182
Drain Current, ID -- A
100
7
10
IT16181
1000
7
5
7
0.001
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5
3
2
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
--25
°
5
°
C
Tc= --2
75
°
C
Source Current, IS -- A
1.0
7
5
3
2
0.1
7
5
3
2
C
f=1MHz
3
2
tf
10
7
5
3
2
1.0
0.1
td(on)
tr
100
7
5
3
2
10
Coss
Crss
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
IT16183
0
5
10
15
20
25
30
IT16184
Drain-to-Source Voltage, VDS -- V
No. A1896-3/9
SFT1443
10
9
VGS -- Qg
VDS=50V
ID=9A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=36A (PW≤10μs)
ID=9A
DC
o
10
μ
10
ms
per
atio
n
s
10
0
1m
s
μ
s
Operation in
this area is
limited by RDS(on).
10
0m
s
0.01
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
IT16185
25
Drain-to-Source Voltage, VDS -- V
PD -- Tc
5 7 100
IT16186
Allowable Power Dissipation, PD -- W
1.0
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
20
19
0.8
15
0.6
10
0.4
0.2
5
0
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT16187
Case Temperature, Tc --
°C
IT16188
No. A1896-4/9
SFT1443
Taping Specification
SFT1443-TL-H
No. A1896-5/9
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