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UGF8FT

Description
8 A, 300 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size105KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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UGF8FT Overview

8 A, 300 V, SILICON, RECTIFIER DIODE

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGF8FT AND UGF8GT
ULTRAFAST SOFT RECOVERY RECTIFIER
Reverse Voltage -
300 to 400 Volts
Forward Current -
8.0 Amperes
ITO-220AC
FEATURES
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.405 (10.27)
0.383 (9.72)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
0.600 (15.5)
0.580 (14.5)
0.670 (17.2)
0.646 (16.4)
2
0.350 (8.89)
0.330 (8.38)
PIN
1
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
0.110 (2.80)
0.100 (2.54)
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for freewheeling diode power factor
correction applications
Soft recovery characteristics
Excellent high temperature switching
Optimized to reduce switching losses
High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
Glass passivated chip junction
MECHANICAL DATA
Case:
ITO-220AC molded plastic body
Terminals:
Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
Mounting Torque:
5 in. - lbs. max.
0.037 (0.94)
0.027 (0.69)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
0.022 (0.55)
0.014 (0.36)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UGF8FT
UGF8GT
UNITS
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at I
F
= 8A
(NOTE 1)
Maximum reverse leakage current
at working peak reverse voltage
Reverse recovery time at
I
F
=1.0A, di/dt=100A/µs, V
R
=30V, I
rr
=0.1 I
RM
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Maximum reverse recovery current at
I
F
=10A, di/dt=50A/µs,V
R
=30V
Maximum stored charge
I
F
=2A, di/dt=20A/µs, V
R
=30V, I
rr
=0.1 I
RM
Typical thermal resistance from junction to case
Operating junction and storage temperature range
NOTE:
(1) Pulse test: 300µs pulse width, 1% duty cycle
NOTICE:
Advanced product information is subject to change without notice
V
RRM
V
RWM
V
RMS
V
DC
I
(AV)
I
FSM
T
J
=25°C
T
J
=150°C
T
J
=25°C
T
J
=100°C
Maximum
300
225
210
300
8.0
100.0
1.30
1.00
10
350
50
35
5.5
55
5.0
400
300
280
400
Volts
Volts
Volts
Volts
Amps
Amps
V
F
I
R
t
rr
t
rr
Volts
µA
ns
ns
Amps
nC
°C/W
°C
T
C
=100°C
I
RM
Q
rr
R
ΘJC
T
J
, T
STG
-40 to+150
4/98

UGF8FT Related Products

UGF8FT UGF8GT
Description 8 A, 300 V, SILICON, RECTIFIER DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC

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