®
BTA04 T/D/S/A
BTB04 T/D/S/A
SENSITIVE GATE TRIACS
A2
FEATURES
Very low I
GT
= 10mA max
Low I
H
= 15mA max
BTA Family:
Insulating voltage = 2500V
(RMS)
(UL recognized: E81734)
s
s
s
G
A1
DESCRIPTION
The BTA/BTB04 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
A1
A2
G
TO-220AB
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
TSM
It
dI/dt
2
Parameter
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I t value
Critical rate of rise of on-state current
Gate supply: I
G
= 50mA dI
G
/dt = 0.1A/µs
Storage and operating junction temperature range
Maximum lead soldering temperature during 10s at 4.5mm from case
2
Value
BTA
BTB
Tc = 90°C
Tc = 95°C
tp = 8.3ms
tp = 10ms
tp = 10ms
Repetitive
F = 50Hz
Non repetitive
42
40
8
10
50
-40 to +150
-40 to +110
260
4
Unit
A
A
A
2
s
A/µs
Tstg
Tj
Tl
°C
°C
BTA / BTB04-
Symbol
V
DRM
V
RRM
Parameter
400 T/D/S/A
600 T/D/S/A
600
700 T/D/S/A
700
V
Unit
400
Repetitive peak off-state voltage Tj = 110°C
September 2001 - Ed: 1A
1/6
BTA04 T/D/S/A
BTB04 T/D/S/A
THERMAL RESISTANCE
Symbol
Rth (j-a)
Rth (j-c) DC
Rth (j-c) AC
Junction to ambient
Junction to case for DC
Junction to case for 360° conduction angle (F = 50Hz)
BTA
BTB
BTA
BTB
Parameter
Value
60
4.4
3.2
3.3
2.4
°C/W
Unit
°C/W
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G(AV)
= 1W P
GM
= 40W (tp = 20µs) I
GM
= 4A (tp = 20µs) V
GM
= 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
BTA / BTB04
Symbol
I
GT
Test conditions
V
D
= 12V (DC)
R
L
= 33Ω
Tj = 25°C
Quadrant
T
I - II - III
IV
V
GT
V
GD
tgt
I
L
V
D
= 12V (DC)
V
D
= V
DRM
R
L
= 33Ω
R
L
= 3.3kΩ
Tj = 25°C
Tj =110°C
Tj = 25°C
Tj = 25°C
I - II - III - IV
I - II - III - IV
I - II - III - IV
I - III - IV
II
I
H
*
V
TM
*
I
DRM
I
RRM
dV/dt *
I
T
= 100mA Gate open
I
TM
= 5.5A
V
DRM
rated
V
RRM
rated
Linear slope up to
V
D
= 67% V
DRM
gate open
(dI/dt)c = 1.8A/ms
tp = 380µs
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 110°C
Tj = 110°C
MAX.
MAX.
MAX.
MAX.
TYP.
MIN.
(dI/dt)c*
Tj = 110°C
TYP.
10
-
1
10
-
1
MAX.
MAX.
MAX.
MIN.
TYP.
TYP.
10
20
15
10
20
15
1.65
0.01
0.75
-
10
5
-
10
5
V/µs
V/µs
5
5
D
5
10
1.5
0.2
2
20
40
25
20
40
25
mA
V
mA
S
10
10
A
10
25
V
V
µs
mA
mA
Unit
V
D
= V
DRM
I
G
= 40mA
dI
G
/dt = 0.5A/µs
I
G
= 1.2I
GT
* For either polarity of electrode A
2
voltage with reference to electrode A
1
2/6
BTA04 T/D/S/A
PRODUCT INFORMATION
I
T(RMS)
Package
A
BTA
(Insulated)
4
V
400
600
700
BTB
(Uninsulated)
400
600
T
X
X
X
X
X
X
X
X
X
D
S
V
DRM
/ V
RRM
BTB04 T/D/S/A
Sensitivity Specification
A
X
ORDERING INFORMATION
BT
Triac
Series
Insulation:
A: insulated
B: non insulated
Current: 04A
A
04
-
400
T
Sensitivity
Voltage:
400: 400V
600: 600V
700: 700V
3/6
BTA04 T/D/S/A
BTB04 T/D/S/A
Fig. 2:
Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTA).
Fig. 1:
Maximum RMS power dissipation versus
RMS on-state current (F = 50Hz).(Curves are cut
off by (dI/dt)c limitation)
Fig. 3:
Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (BTB).
Fig. 4:
RMS on-state current versus case temper-
ature.
Fig. 5:
Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Fig. 6:
Relative variation of gate trigger current
and holding current versus junction temperature.
Zth(j-c)
0.1
Zth(j-a)
tp(s)
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
4/6
BTA04 T/D/S/A
Fig. 7:
Non repetitive surge peak on-state current
versus number of cycles.
BTB04 T/D/S/A
Fig. 8:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width: t
≤
10ms, and cor-
responding value of I
2
t.
Fig. 9:
On-state characteristics (maximum values).
5/6
MCU
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