2SA1036P datasheet, PDF - EEWORLD Datasheet

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2SA1036P: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size196KB，4 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.

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2SA1036P Overview

Transistor,

2SA1036P Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Galaxy Electrical

Silicon Epitaxial Planar Transistor

FEATURES

Large I

C.ICMAX.

=-500mA.

Production specification

2SA1036

Lead-free

Low V

CE(sat).

Ideal for low-voltage operation.

APPLICATIONS

Ideal for low-voltage operation.

SOT-23

ORDERING INFORMATION

Type No.

2SA1036

Marking

HP,HQ,HR

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction and Storage Temperature

Value

-40

-32

-5

-500

200

-55~150

Units

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC012

Rev.A

www.galaxycn.com

2SA1036P Related Products

	2SA1036P	2SA1036Q	2SA1036R
Description	Transistor,	Transistor,	Transistor,
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	120	180
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1

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