2SA1037Q-TP datasheet, PDF - EEWORLD Datasheet

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2SA1037Q-TP: Description150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size70KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA1037Q-TP Overview

150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SA1037Q-TP Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA1037

•

Features

Small Package

Mounting:any position

ROHS Compliant

PNP Silicon

Epitaxial Transistors

SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

and MSL Rating 1

Maximum Ratings @ T

= 25

(unless otherwise noted)

Symbol

STG

Parameter

Collector Current

Total Device Dissipation

Junction Temperature

Storage Temperature Range

Value

-0.15

0.2

150

-55 to +150

Unit

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

OFF CHARACTERISTICS

)CEO

)CBO

)EBO

Parameter

Collector-Emitter Breakdown Voltage

=-1mAdc,I

=0)

Collector-Base Breakdown Voltage

=-50uAdc,I

=0)

Collector-Base Breakdown Voltage

=-50uAdc,I

=0)

Collector-Base Cutoff Current

=-60Vdc, I

=0)

Emitter-Base Cutoff Current

=-6.0Vdc, I

=0)

DC Current Gain

=-1.0mAdc, V

=-6.0Vdc)

Collector-Emitter Saturation Voltage

=-5.0mAdc, I

=-5.0mAdc)

Transition Frequency

=-12Vdc,I

=-2mAdc,f=30MHZ)

120-270

180-390

Min

-50

-60

-6.0

Max

Units

-0.1

µAdc

uAdc

DIM

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

CBO

EBO

ON CHARACTERISTICS

CE(sat)

)

120

560

-0.5

Vdc

MHZ

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

120

Suggested Solder

Pad Layout

.031

.800

CLASSIFICATION OF

Rank

Range

Marking

270-560

.035

.900

.079

2.000

inches

.037

.950

.037

.950

Revision:

www.mccsemi.com

1 of 2

2008/01/01

2SA1037Q-TP Related Products

	2SA1037Q-TP	2SA1037-Q	2SA1037R-TP	2SA1037-R	2SA1037S-TP	2SA1037-S	2SA1037-TP	2SA1037
Description	150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	ROHS COMPLIANT, PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	ROHS COMPLIANT, PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	unknow	compli	unknow	compli	unknow	compli	compli	compli
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	120	180	180	270	270	120	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz
Base Number Matches	1	1	1	1	1	1	1	-
Is it Rohs certified?	-	incompatible	-	incompatible	-	incompatible	conform to	incompatible
ECCN code	-	EAR99	-	EAR99	-	EAR99	EAR99	EAR99
JESD-609 code	-	e0	-	e0	-	e0	e3	e0
Humidity sensitivity level	-	1	-	1	-	1	1	1
Peak Reflow Temperature (Celsius)	-	240	-	240	-	240	260	240
Terminal surface	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	30	-	30	-	30	10	30

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