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JANSH2N2221AUBC

Description
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size65KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

JANSH2N2221AUBC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-CDSO-N3
Reach Compliance Codecompli
ECCN code3A001.A.1.A
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-CDSO-N3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusQualified
GuidelineMIL-19500/255
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)35 ns
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
P
T
0.5
0.65
0.50
-65 to +200
W
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
75
6.0
800
Unit
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)
2N2221A, 2N2222A
Operating & Storage Junction Temperature Range
T
op
, T
stg
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
1.
2.
2N2222A, L
2N2222AUA
2N2222AUB, UBC
R
θJA
325
210
325
°C/W
Symbol
Max.
Unit
4 PIN
2N2221AUA, 2N2222AUA
Derate linearly 3.08 mW/°C above T
A
> +37.5°C
Derate linearly 4.76 mW/°C above T
A
> +63.5°C
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
T4-LDS-0042 Rev. 2 (080857)
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