UNISONIC TECHNOLOGIES CO., LTD
2SC3834
SWITCH NPN TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC
2SC3834
is an epitaxial planar type NPN silicon
transistor.
FEATURES
* Humidifier, DC-DC converter, and general purpose
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Ordering Number
Package
Lead Free Plating
Halogen Free
2SC3834L-TA3-T
2SC3834G-TA3-T
TO-220
2SC3834L-TF3-T
2SC3834G-TF3-T
TO-220F
2SC3834L-T3P-T
2SC3834G-T3P-T
TO-3P
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING
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2SC3834
PARAMETER
Collector-Base Voltage
Collector-emitter voltage
Emitter-Base Voltage
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25C)
TO-220
TO-220F
TO-3P
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25C, unless otherwise specified)
RATINGS
200
120
8
7
3
60
27
65
UNIT
V
V
V
A
A
W
W
W
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
C
TEST CONDITIONS
I
C
= 50mA
V
CB
=200V, I
E
=0A
V
EB
=8V, I
C
=0A
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
I
C
=3A, I
B
=0.3A
I
E
=-0.5mA, V
CE
=12V, f=100MHz
V
CB
=10 V, I
E
=0A, f=1MHz
MIN
120
TYP
MAX UNIT
V
μA
100
μA
100
220
0.5
1.2
30
110
V
V
MHz
pF
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
70
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QW-R203-026.F
2SC3834
TYPICAL CHARACTERISTICS
I
C
-V
CE
Characteristics (Typical)
250mA
300mA
200mA
150mA
100mA
60mA
40mA
20mA
I
B
=10mA
Collector-Emitter Saturation,V
CE(SAT)
(V)
7
6
Collector Current,I
C
(A)
5
4
3
2
1
0
0
1
2
3
Collector-Emitter Voltage,V
CE
(V)
4
NPN SILICON TRANSISTOR
V
CE(SAT)
-I
B
Characteristics (Typical)
2
1
I
C
=1A
3A
5A
0
0.005 0.01
0.05 0.1
Base Current,I
B
(A)
0.5
1
30
f
T
-I
E
Characteristics (Typical)
V
CE
=12V
20
10
5
Safe Operating Area (Single Pulse)
100ms
10ms
20
1
10
0.5
Without
Healstink
Natural
Cooling
0.1
0
-0.01
0.05
-0.05 -0.1
-0.5 -1
Emitter Current,I
E
(A)
-5
5
10
50
120
Collect-Emitter Voltage,V
CE
(V)
200
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2SC3834
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
50
Maximum Power Dissipation,P
C
(W)
P
C
-T
A
Derating
40
ith
W
In
fin
30
20
ite
H
ea
ts
in
k
10
2
0
Without Heatsink
0
25
100 125
50
75
Ambient Temperature,T
A
(℃)
150
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-026.F
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