OM6011SAT datasheet, PDF - EEWORLD Datasheet

OM6011SAT: DescriptionPower Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,; CategoryDiscrete semiconductor The transistor; File Size186KB，4 Pages; ManufacturerOmnirel Corp.

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OM6011SAT Overview

Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

Parameter Name	Attribute value
Maker	Omnirel Corp.
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.55 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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