ADVANCED INFORMATION
ADVANCED INFORMATION
ADVANCED INFORMATION
UGB8FT AND UGB8GT
ULTRAFAST SOFT RECOVERY RECTIFIER
Reverse Voltage -
300 to 400 Volts
Forward Current -
8.0 Amperes
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.047 (1.19)
0.055 (1.40)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
FEATURES
♦
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦
Ideally suited for freewheeling diode power factor
correction applications
♦
Soft recovery characteristics
♦
Excellent high temperature switching
♦
Optimized to reduce switching losses
♦
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
♦
Glass passivated chip junction
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UGB8FT
UGB8GT
UNITS
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at I
F
= 8A
(NOTE 1)
Maximum reverse leakage current
at working peak reverse voltage
Reverse recovery time at
I
F
=1.0A, di/dt=100A/µs, V
R
=30V, I
rr
=0.1 I
RM
Maximum reverse recovery time at I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Maximum reverse recovery current at
I
F
=10A, di/dt=50A/µs,V
R
=30V
Maximum stored charge
I
F
=2A, di/dt=20A/µs, V
R
=30V, I
rr
=0.1 I
RM
Typical thermal resistance from junction to case
Operating junction and storage temperature range
NOTE:
(1) Pulse test: 300µs pulse width, 1% duty cycle
NOTICE:
Advanced product information is subject to change without notice
V
RRM
V
RWM
V
RMS
V
DC
I
(AV)
I
FSM
T
J
=25°C
T
J
=150°C
T
C
=25°C
T
C
=100°C
Maximum
300
225
210
300
8.0
100.0
1.30
1.00
10
350
50
35
5.5
55
2.2
400
300
280
400
Volts
Volts
Volts
Volts
Amps
Amps
V
F
I
R
t
rr
t
rr
Volts
µA
ns
ns
Amps
nC
°C/W
°C
T
C
=100°C
I
RM
Q
rr
R
ΘJC
T
J
, T
STG
-40 to+150
4/98
RATINGS AND CHARACTERISTIC CURVES UGB8FT AND UGB8GT
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1 - FORWARD CURRENT DERATING
CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
12
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR INDUCTIVE LOAD
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
T
C
=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
10
8.0
6.0
4.0
2.0
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE, °C
100
100
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
1,000
T
J
=125°C
10
T
J
=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
100
T
J
=100°C
10
1
1
T
J
=25°C
0.1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
RECOVERED STORED CHARGE/REVERSE
RECOVERY TIME nC/ns
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
60
I
F
=4.0A
V
R
=30V
di/dt= 150A/µs
di/dt=100A/µs
di/dt=20A/µs
100
40
30
20
di/dt=50A/µs
di/dt=100A/µs
di/dt=50A/µs
di/dt=150A/µs
JUNCTION CAPACITANCE, pF
50
T
J
=25°C
f=1.0 MH
Z
Vsig=50mVp-p
10
di/dt=20A/µs
10
t
rr
Q
rr
0
0
25
50
75
100
125
150
175
JUNCTION TEMPERATURE, °C
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Embedded System
京公网安备 11010802033920号
EEWORLD
