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HN29V128A1ABP-5E

Description
16MX8 FLASH 3.3V PROM, PBGA95, 10 X 11.50 MM, 0.80 MM PITCH, LEAD FREE, CSP-95
Categorystorage    storage   
File Size408KB,53 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

HN29V128A1ABP-5E Overview

16MX8 FLASH 3.3V PROM, PBGA95, 10 X 11.50 MM, 0.80 MM PITCH, LEAD FREE, CSP-95

HN29V128A1ABP-5E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Objectid2012065851
Parts packaging codeBGA
package instructionTFBGA, BGA95,12X12,32
Contacts95
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
compound_id6508963
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B95
length11.5 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8K
Number of terminals95
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA95,12X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Programming voltage3.3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size2K
Maximum standby current0.00001 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeAND TYPE
width10 mm
HN29V128A1A (3.3 V/×8)
HN29V128A0A (3.3 V/×16)
HN29A128A1A (1.8 V/×8)
HN29A128A0A (1.8 V/×16)
128M superAND Flash Memory
(with internal sector management)
REJ03C0031-0300Z
Rev. 3.00
Jun. 09, 2004
Description
The HN29V128A1A, HN29V128A0A, HN29A128A1A, and HN29A128A0A Series is a CMOS flash
memory, which uses cost effective and high performance AND type multi-level memory cell technology.
Current AND flash memory requires us to support complicated operations such as sector management for
defect sector and error check correction. But this series doesn’t need such operations. Beside it supports
wear leveling function, which is sector replacement function in case of that certain sector, reaches certain
erase/write times. And power-on-auto-read function is available. It enables to read the data of the lowest
sector(2k byte) without command and address data input when power is on.
Note: This product is authorized for using consumer application such as cellular phone,
Therefore, please contact Renesas Technology’s sales office before using other applications.
Rev.3.00, Jun.09.2004, page 1 of 49
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