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FCP11N60 / FCPF11N60 / FCPF11N60T
November 2009
SuperFET
TM
FCP11N60 / FCPF11N60 / FCPF11N60T
General Description
SuperFET
TM
is, Fairchild’s proprietary, new generation of
high voltage MOSFET family that is utilizing an advanced
charge balance mechanism for outstanding low on-
resistance and lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. Consequently, SuperFET is very suitable for
various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
Features
•
•
•
•
•
•
650V @ Tj = 150°C
Typ. Rds(on) = 0.32Ω
Ultra low gate charge (typ. Qg=40nC)
Low effective output capacitance (typ. Coss.eff = 95pF)
100% avalanche tested
RoHS Compliant
D
●
G D S
TO-220AB
FCP Series
G
GD S
◀
●
●
▲
TO-220F
FCPF Series
S
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
T
C
= 25°C unless otherwise noted
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FCP11N60
11
7
33
FCPF11N60(T)
11*
7*
33*
±
30
340
11
12.5
4.5
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
125
1.0
36
0.29
-55 to +150
300
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60
1.0
0.5
62.5
FCPF11N60(T)
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2009 Fairchild Semiconductor Corporation
Rev.B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Elerical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
BV
DS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Break-
down Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, For-
ward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= 250
µA,
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
µA,
T
J
= 150°C
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 0 V, I
D
= 11 A
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
--
--
650
0.6
700
--
--
--
--
--
--
--
--
1
10
100
-100
V
V
V/°C
V
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 5.5 A
V
DS
= 40 V, I
D
= 5.5 A
(Note 4)
3.0
--
--
--
0.32
9.7
5.0
0.38
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Equivalent Series Resistance
V
DS
= 480 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 480 V, V
GS
= 0 V
Drain Open, f=1MHz
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
--
1148
671
63
35
95
2.5
1490
870
82
--
--
--
pF
pF
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 11 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 300 V, I
D
= 11 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
34
98
119
56
40
7.2
21
80
205
250
120
52
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Volt-
V
GS
= 0 V, I
S
= 11 A
age
V
GS
= 0 V, I
S
= 11 A,
Reverse Recovery Time
dI
F
/ dt = 100 A/µs
Reverse Recovery Charge
--
--
--
--
(Note 4)
--
--
--
390
5.7
11
33
1.4
--
--
A
A
V
ns
µC
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
= 5.5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
11A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Typical Characteristics
10
2
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
1
150 C
o
10
0
10
0
25 C
o
-55 C
o
10
-1
* Notes :
1. 250
µ
s Pulse Test
o
2. T
C
= 25 C
* Note
1. V
DS
= 40V
2. 250
µ
s Pulse Test
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.8
I
DR
, Reverse Drain Current [A]
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
V
GS
= 10V
0.6
10
1
0.4
V
GS
= 20V
10
0
150 C
o
25 C
* Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
o
0.2
* Note : T
J
= 25 C
o
0.0
0
5
10
15
20
25
30
35
40
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 100V
V
GS
, Gate-Source Voltage [V]
5000
10
V
DS
= 250V
V
DS
= 400V
Capacitance [pF]
4000
8
3000
C
oss
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
6
2000
C
iss
C
rss
4
1000
2
* Note : I
D
= 11A
0
-1
10
10
0
10
1
0
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
Rev. B2, October 2003
FCP11N60 / FCPF11N60 / FCPF11N60T
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 5.5 A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
10
2
Operation in This Area
is Limited by R
DS(on)
1 ms
10 ms
DC
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
100 us
10
1
100 us
1 ms
10 ms
100 ms
DC
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
0
10
0
10
-1
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
-1
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FCP11N60
Figure 9-2. Maximum Safe Operating Area
for FCPF11N60(T)
12.5
10.0
I
D
, Drain Current [A]
7.5
5.0
2.5
0.0
25
50
75
100
o
125
150
T
C
, Case Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
©2009 Fairchild Semiconductor Corporation
Rev. B2, October 2003
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