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2SD1001-T1

Description
300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SD1001-T1 Overview

300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN

2SD1001-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment2 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
VCEsat-Max0.6 V
Base Number Matches1

2SD1001-T1 Related Products

2SD1001-T1 2SD1001-T2
Description 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN 300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN
Is it Rohs certified? incompatible incompatible
Parts packaging code SC-62 SC-62
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.3 A 0.3 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 30 30
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power consumption environment 2 W 2 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz
VCEsat-Max 0.6 V 0.6 V
Base Number Matches 1 1
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