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UG1D

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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UG1D Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL

UG1A THRU UG1D
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 200 Volts
DO-204AL
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency switching
power supplies, inverters
and as a free wheeling diode
Ultrafast recovery time for high efficiency
Soft recovery characteristics
Excellent high temperature switching
Glass passivated junction
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-204AL, molded plastic body
over passivated chip
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UG1A
UG1B
UG1C
UG1D
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=75°C
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
L
=75°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Maximum reverse recovery time
(NOTE 2)
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
T
J
=25°C
T
J
=100°C
T
J
=25°C
T
J
=100°C
t
rr
Q
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
50
35
50
100
70
100
1.0
40.0
0.95
150
105
150
200
140
200
Volts
Volts
Volts
Amp
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
T
A
= 25°C
T
A
=100°C
5.0
200.0
15.0
25.0
35.0
8.0
12.0
7.0
60.0
20.0
-55 to +150
Maximum recovered stored charge
(NOTE 2)
Typical junction capacitance
(NOTE 3)
Typical thermal resistance
(NOTE 4)
Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) t
rr
and Qrr measured at: I
F
=1.0A V
R
=30V, di/dt=50A/µs, I
rr
=10% I
RM
for measurement of t
rr
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length
4/98

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UG1D UG1B UG1C UG1A
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 150 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
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