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SSM3K7002FU(TE85L)

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),SOT-323
CategoryDiscrete semiconductor    The transistor   
File Size167KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

SSM3K7002FU(TE85L) Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),SOT-323

SSM3K7002FU(TE85L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.15 W
surface mountYES
SSM3K7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K7002FU
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
3.3
Ω
(max) (@V
GS
=
4.5 V)
: R
on
=
3.2
Ω
(max) (@V
GS
=
5 V)
: R
on
=
3.0
Ω
(max) (@V
GS
=
10 V)
0.65 0.65
1.3 ± 0.1
2.0 ± 0.2
2.1± 0.1
1.25 ± 0.1
+0.1
0.3 - 0
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
60
±
20
200
800
150
150
−55~150
Unit
V
V
1
2
3
Channel temperature
Storage temperature range
°C
°C
1. GATE
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: mounted on FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 0.6mm
×
3)
0.6 mm
1.0 mm
Note:
USM
JEDEC
JEITA
TOSHIBA
2. SOURCE
3. DRAIN
SC-70
2-2E1E
Marking
3
Equivalent Circuit
(top view)
3
NC
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
0~0.1
Drain power dissipation (Ta
=
25°C)
mW
0.7
mA
0.9 ± 0.1
+0.1
0.15 -0.05

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