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UG1003

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size61KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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UG1003 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

UG1001 - UG1005
1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
A
D
DO-41
Dim
A
B
C
D
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
C
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.35 grams (approx.)
Mounting Position: Any
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJA
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
UG1001
50
35
UG1002
100
70
UG1003
200
140
1.0
30
UG1004
400
280
UG1005
600
420
Unit
V
V
A
A
1.0
5.0
100
50
20
95
-65 to +150
1.3
1.7
V
mA
75
10
ns
pF
K/W
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
DS27008 Rev. A1-2
1 of 2
UG1001 - UG1005

UG1003 Related Products

UG1003 UG1004 UG1002 UG1001
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
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