2N4123TRA datasheet, PDF - EEWORLD Datasheet

2N4123TRA: DescriptionSmall Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size406KB，6 Pages; ManufacturerCentral Semiconductor

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2N4123TRA Overview

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
Collector-based maximum capacity	4 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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