DF
N1
01
PMXB360ENEA
16 September 2013
0D
-3
80 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
Power management in automotive and industrial applications
LED driver
DC-to-DC converter
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 1.1 A; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
80
20
1.1
Unit
V
V
A
Static characteristics
drain-source on-state
resistance
[1]
2
-
345
450
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
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NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G
S
D
D
gate
source
drain
drain
2
Transparent top view
S
017aaa255
Simplified outline
1
4
3
Graphic symbol
D
G
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMXB360ENEA
DFN1010D-3
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
Version
SOT1215
Type number
7. Marking
Table 4.
Marking codes
Marking code
11 10 10
READING
DIRECTION
Type number
PMXB360ENEA
MARKING CODE
(EXAMPLE)
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
aaa-008041
Fig. 1.
PMXB360ENEA
DFN1010D-3 (SOT1215) binary marking code description
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© NXP N.V. 2013. All rights reserved
Product data sheet
16 September 2013
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NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
I
DM
E
DS(AL)S
P
tot
peak drain current
non-repetitive drain-source
avalanche energy
total power dissipation
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
j(init)
= 25 °C; I
D
= 0.17 A; DUT in
avalanche (unclamped)
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
junction temperature
ambient temperature
storage temperature
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
Max
80
20
1.1
0.7
4.4
7.1
400
1070
6250
150
150
150
Unit
V
V
A
A
A
mJ
mW
mW
mW
°C
°C
°C
Source-drain diode
source current
T
amb
= 25 °C
HBM
[1]
-
0.8
A
ESD maximum rating
electrostatic discharge voltage
[1]
[2]
[3]
[3]
-
2000
V
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Measured between all pins.
2
PMXB360ENEA
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© NXP N.V. 2013. All rights reserved
Product data sheet
16 September 2013
3 / 15
NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 2.
Normalized total power dissipation as a
function of junction temperature
Fig. 3.
Normalized continuous drain current as a
function of junction temperature
10
I
D
(A)
1
aaa-009009
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
t
p
= 100 µs
DC; T
sp
= 25 °C
10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 1 ms
t
p
= 10 ms
10
-2
10
-1
t
p
= 100 ms
1
10
V
DS
(V)
10
2
I
DM
= single pulse
Fig. 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
[1]
[2]
Min
-
-
Typ
271
102
Max
312
117
Unit
K/W
K/W
PMXB360ENEA
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© NXP N.V. 2013. All rights reserved
Product data sheet
16 September 2013
4 / 15
NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
Symbol
R
th(j-sp)
Parameter
thermal resistance
from junction to solder
point
[1]
[2]
10
3
Conditions
Min
-
Typ
15
Max
20
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-008918
2
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.5
0.25
0.1
0.75
0.33
0.2
0.05
0.02
0
0.01
10
1
10
-3
10-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
aaa-008919
duty cycle = 1
0.75
0.5
0.33
10
0.02
0.01
0
1
10
-3
0.25
0.2
0.1
0.05
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 6.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB360ENEA
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© NXP N.V. 2013. All rights reserved
Product data sheet
16 September 2013
5 / 15
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