The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 January 2012.
INCH-POUND
MIL-PRF-19500/37E
w/AMENDMENT 1
16 December 2011
SUPERSEDING
MIL-S-19500/37E
16 September 2001
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,
2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N336T2, 2N333LT2, 2N335LT2, 2N336LT2
2N333AT2, 2N335AT2, 2N336AT2, 2N333ALT2, 2N335ALT2, AND 2N336ALT2, JAN
Inactive for new design after 7 June 1999
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.
1.2 Physical dimensions. See figure 1 (TO-5 for isolated leads only) and figure 2 (TO-205AA).
1.3 Maximum ratings.
P
T
T
A
= 25°C
2N333, T2, LT2
2N335, T2, LT2
2N336, T2, LT2
mW
(1) 150
2N333A, T2, LT2
2N335A, T2, LT2
2N336A, T2, LT2
mW
(2) 500
V
EBO
V
CEO
V
CBO
2N333, T2, LT2
2N335, T2, LT2
2N336, T2, LT2
V dc
1
2N333A, T2, LT2
2N335A, T2, LT2
2N336A, T2, LT2
V dc
4
2N333, T2, LT2
2N335, T2, LT2
2N336, T2, LT2
°C
-65 to +175
2N333A, T2, LT2
2N335A, T2, LT2
2N336A, T2, LT2
°C
-65 to +175
T
stg
V dc
45
V dc
45
A
(1) Derate approximately 1 mW/°C for T between +25°C and +175°C.
(2) Derate approximately 3.33 mW/°C for T between +25°C and +175°C.
A
1.4 Primary electrical characteristics.
h
fe
V
CB
= 5 V dc, I
E
= -1 mA
Limits
2N333, T2, LT2
2N333A, T2, LT2
2N335, T2, LT2
2N335A, T2, LT2
2N336, T2, LT2
2N336A, T2, LT2
MHz
Min
Max
18
44
37
90
76
270
2.5
15
f
hfb
V
CB
= 5 V dc
I
E
= -1 mA dc
C
obo
V
CB
= 5 V dc
I
E
= 0 mA dc
100kHz
≤
f
≤
1 MHz
pF
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at
https://assist.daps.dla.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/37E
w/AMENDMENT 1
Dimensions
Symbol
Inches
Min
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
TL
TW
r
α
.029
.028
.250
.050
.045
.034
.010
45°TP
0.74
0.71
.305
.240
.335
Max
.335
.260
.370
Millimeters
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
6
7, 8
7, 8
7, 8
7, 8
7, 8
1.27
1.14
0.86
0.25
45°TP
5
3, 4
3
10
6
Notes
TO-5
.200 TP
.016
1.500
.016
.021
1.750
.019
.050
5.08 TP
0.41
38.10
0.41
0.53
44.45
0.48
1.27
6.35
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab
at MMC. The device may be measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter
is uncontrolled in L1 and beyond LL minimum.
8. All leads electrically isolated from the case.
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
FIGURE 1. Physical dimensions of transistors, types 2N333, 2N333A, 2N335, 2N335A, 2N336, and
2N336A (TO-5).
2
MIL-PRF-19500/37E
w/AMENDMENT 1
Dimensions
Symbol
Inches
Min
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
TL
TW
r
α
.029
.028
.250
.050
.045
.034
.010
45°TP
0.74
0.71
.305
.240
.335
Max
.335
.260
.370
Millimeters
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
6
7, 8
7, 8, 12
7, 8
7, 8
7, 8
1.27
1.14
0.86
0.25
45°TP
5
3, 4
3
10
6
Notes
TO-39
.200 TP
.016
.500
.016
.021
.750
.019
.050
5.08 TP
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be
within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC)
relative to tab at MMC. The device may be measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum.
Diameter is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with AMSE Y14.5M, diameters are equivalent to
Φx
symbology.
12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum.
FIGURE 2.
Physical dimensions of transistors, types 2N333T2, 2N333AT2, 2N335T2, 2N335AT2, 2N336T2,
2N336AT2 2N333LT2, 2N333ALT2, 2N335LT2, 2N335ALT2, 2N336LT2, and 2N336ALT2
(TO-205AD).
3
MIL-PRF-19500/37E
w/AMENDMENT 1
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch
or
https://assist.daps.dla.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 and figure 2.
* 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and tables I, II, and III.
* 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I.
* 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4
MIL-PRF-19500/37E
w/AMENDMENT 1
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Conformance inspection (see 4.3).
* 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.3 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
* 4.3.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500 and table I herein.
* 4.3.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIb (JAN) of MIL-PRF-19500. Electrical measurements (end-points) and delta
requirements shall be in accordance with table II herein, as applicable.
* 4.3.3 Group C inspection. Group C inspection shall be conducted in accordance with the test and conditions
specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta
requirements shall be in accordance with table III herein, as applicable.
5
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