Data Sheet
NESG7030M04
NPN Silicon Germanium Carbon RF Transistor
FEATURES
•
The device is an ideal choice for low noise, high gain amplification.
NF = 0.75 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.8 GHz
G
a
= 14 dB TYP. @ V
CE
= 2 V, I
C
= 5 mA, f = 5.8 GHz
•
P
O (1 dB)
= 4.5 dBm TYP. @ V
CE
= 2 V, I
C (set)
= 10 mA, f = 2 GHz
•
Maximum stable power gain: MSG =16.5 dB TYP. @ V
CE
= 2 V, I
C
= 15 mA, f = 5.8 GHz
•
SiGe: C HBT technology
•
This product is improvement of ESD.
•
Flat-lead 4-pin thin-type super minimold (M04 PKG)
R09DS0037EJ0100
Rev.1.00
Apr 18, 2012
OUTLINE
RENESAS Package code : M04
(Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG))
4
3
1
2
Note : Marking is "T1R."
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
ORDERING INFORMATION
Part Number
NESG7030M04
NESG7030M04-T2
NESG7030M04-T2B
Order Number
NESG7030M04-A
NESG7030M04-T2-A
NESG7030M04-T2B-A
Package
Flat-lead 4-pin thin-
type super minimold
(M04 PKG)
(Pb-Free)
Quantity
50 pcs
(Non reel)
3 kpcs/reel
15kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1(Emitter), Pin 2
(Collector) face the
perforation side of the tape
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 1 of 9
NESG7030M04
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
I
B
Note1
I
C
P
tot
Note2
T
j
T
stg
Ratings
10
4.3
2
30
125
150
−65
to +150
Unit
V
V
mA
mA
mW
°C
°C
Notes: 1. Depend on the ESD protect device.
2
2. Mounted on 1.08 cm ×1.0 mm (t) glass epoxy PWB
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Reverse Transfer Capacitance
Insertion Power Gain
Maximum Stable Power Gain
Noise Figure (1)
Associated Gain (1)
Noise Figure (2)
Associated Gain (2)
Gain 1 dB Compression Output
Power
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 4.3 V, I
E
= 0
V
EB
= 0.4 V, I
C
= 0
V
CE
= 2 V, I
C
= 5 mA
V
CB
= 2 V, I
E
= 0, f = 1 MHz
V
CE
= 2 V, I
C
= 15 mA, f = 5.8 GHz
V
CE
= 2 V, I
C
= 15 mA, f = 5.8 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 5 mA, f = 5.8 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C (set)
= 10 mA,
f = 2 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
MIN.
−
−
200
−
11.0
−
−
−
−
12.0
−
TYP.
−
−
320
50
13.0
16.5
0. 5
21.0
0.75
14.0
4.5
MAX.
100
100
500
80
−
−
−
−
1.15
−
−
Unit
nA
nA
−
fF
dB
dB
dB
dB
dB
dB
dBm
C
re
Note 2
⏐S
21e
⏐
2
Note 3
MSG
NF1
G
a1
NF2
G
a2
P
O (1 dB)
Notes: 1. Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2. Collector to base capacitance when the emitter grounded.
S
21
3. MSG =
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
YFB
T1R
200 to 500
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 2 of 9
NESG7030M04
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
250
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
100
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
Collector to Base Voltage V
CB
(V)
f = 1 MHz
Total Power Dissipation P
tot
(mW)
200
Mounted on Glass Eploxy PWB
(1.08 cm
2
×
1.0 mm (t) )
150
125
100
50
0
0
25
50
75
100
125
150
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 2.0 V
15
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current I
C
(mA)
Collector Current I
C
(mA)
10
1
0.1
0.01
40
μ
A
10
36
μ
A
32
μ
A
28
μ
A
24
μ
A
20
μ
A
16
μ
A
12
μ
A
8
μ
A
I
B
= 4
μ
A
5
0.001
0.0001
0.4
0.6
0.8
1.0
0
0
1
2
3
4
5
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 2.0 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Remark
The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 3 of 9
NESG7030M04
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
Gain Bandwidth Product f
T
(GHz)
35
30
25
20
15
10
5
0
1
V
CE
= 1 V
f = 2 GHz
35
30
25
20
15
10
5
0
1
V
CE
= 2 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
10
Collector Current I
C
(mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
Gain Bandwidth Product f
T
(GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
0
0.1
1
10
100
|S
21e
|
2
MSG
MAG
V
CE
= 1 V
I
C
= 5 mA
MSG
35
30
25
20
15
10
5
0
1
V
CE
= 3 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1
1
10
|S
21e
|
2
MSG
MAG
V
CE
= 2 V
I
C
= 5 mA
35
30
25
20
15
10
5
0
0.1
1
10
|S
21e
|
2
MSG
MAG
V
CE
= 3 V
I
C
= 5 mA
MSG
MSG
100
100
Frequency f (GHz)
Frequency f (GHz)
Remark
The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 4 of 9
NESG7030M04
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
40
MSG
MAG
MSG
|S
21e
|
2
15
10
5
0
0.1
1
10
100
V
CE
= 1 V
I
C
= 15 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
35
30
25
20
|S
21e
|
2
15
10
5
0
0.1
1
10
100
MSG
V
CE
= 2 V
I
C
= 15 mA
MAG
MSG
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
35
30
25
20
MAG
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Gain MAG (dB)
Maximum Stable Gain MSG (dB)
35
MSG
30
25
20
|S
21e
|
2
15
10
5
0
0.1
1
MAG
V
CE
= 3 V
I
C
= 15 mA
MSG
10
100
Frequency f (GHz)
Remark
The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 5 of 9
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