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PBSS4160QA

Description
60 V, 1 A NPN low VCEsat (BISS) transistor
File Size256KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PBSS4160QA Overview

60 V, 1 A NPN low VCEsat (BISS) transistor

DF
N1
01
PBSS4160QA
23 August 2013
0D
-3
60 V, 1 A NPN low VCEsat (BISS) transistor
Product data sheet
1. General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
PNP complement: PBSS5160QA.
2. Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
3. Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse; t
p
≤ 1 ms
I
C
= 1 A; I
B
= 0.1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
170
Max
60
1
1.5
235
Unit
V
A
A
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