®
T4 Series
4A TRIAC
S
A2
SNUBBERLESS™ & LOGIC LEVEL
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
4
600 to 800
5 to 35
Unit
A
V
mA
A1 A2
G
A2
G
A1
A2
DESCRIPTION
Based on ST’s Snubberless / Logic level technol-
ogy providing high commutation performances,
the
T4
series is suitable for use on AC inductive
loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the T4...-
...W version complies with UL standards (ref.
E81734).
A1
A2
G
DPAK
(T4-B)
IPAK
(T4-H)
A2
A1
A2
G
A1
A2
G
TO-220AB
(T4-T)
ISOWATT220AB
(T4-W)
Table 2: Order Codes
Part Number
T405-xxxB
T405-xxxB-TR
T405-xxxH
T405-xxxT
T405-xxxW
T410-xxxB
T410-xxxB-TR
T410-xxxH
T4105-xxxT
T410-xxxW
T435-xxxB
T435-xxxB-TR
T435-xxxH
T435-xxxT
T435-xxxW
Marking
See page table 8 on
page 9
January 2006
REV. 7
1/10
T4 Series
Table 3: Absolute Maximum Ratings
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine
wave)
IPAK/DPAK/
TO-220AB
T
c
= 110°C
Value
4
30
31
5.1
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
ISOWATT220AB T
c
= 105°C
t = 20 ms
t = 16.7 ms
A
A
²
s
A/µs
A
W
°C
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, T
j
initial = 25°C) F = 60 Hz
I
²
t Value for fusing
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 10 ms
F = 120 Hz
t
p
= 20 µs
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
Test Conditions
V
D
= 12 V R
L
= 30
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c (2) (dV/dt)c = 10 V/µs
Without snubber
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
I - III
II
Quadrant
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
10
10
15
20
1.8
0.9
-
T4
T405
5
T410
10
1.3
0.2
T435
35
Unit
mA
V
V
15
25
30
40
2.7
2.0
-
35
50
60
400
-
-
2.5
mA
mA
V/µs
A/ms
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
2/10
T4 Series
Table 5: Static Characteristics
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 5.5 A
Test Conditions
t
p
= 380 µs
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MAX.
MAX.
MAX.
MAX.
1
mA
Value
1.56
0.89
120
5
Unit
V
V
mΩ
µA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
R
th(j-c)
Junction to case (AC)
S = 0.5 cm
²
R
th(j-a)
Junction to ambient
Parameter
IPAK / DPAK / TO-220AB
ISOWATT220AB
DPAK
TO-220AB / ISOWATT220AB
IPAK
S = Copper surface under tab.
Value
2.6
4.0
70
60
100
Unit
°C/W
°C/W
3/10
T4 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
6
5
3.5
4.5
4.0
TO-220AB / DPAK / IPAK
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
4
3
3.0
2.5
2.0
ISOWATT220AB
2
1
1.5
1.0
I
T(RMS)
(A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
0.0
0
25
50
T
C
(°C)
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
I
T(RMS)
(A)
2.0
1.8
1.6
DPAK
(S=0.5CM
2
)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1E+0
R
th(j-c)
ISOWATT220AB
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
DPAK / IPAK
TO-220AB / DPAK / IPAK
R
th(j-a)
1E-1
TO-220AB / ISOWATT220AB
T
C
(°C)
75
100
125
t
p
(s)
1E-2
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics (maximum
values)
I
TM
(A)
30.0
T
j
max.
V
to
= 0.90V
R
d
= 120 m
Ω
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
35
30
t=20ms
10.0
25
20
T
j
= T
j
max.
Non repetitive
T
j
initial=25°C
Repetitive
T
C
=110°C
One cycle
1.0
15
T
j
= 25°C.
10
5
V
TM
(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
10
Number of cycles
100
1000
4/10
T4 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
I
TSM
(A), I t (A s)
500
T
j
initial=25°C
dI/dt limitation:
50A/µs
I
TSM
2
2
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
100
1.5
I
H
& I
L
10
I
2
t
1.0
0.5
t
p
(ms)
1
0.01
0.10
1.00
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10.0
100.0
T405
T410
T435
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
(dV/dt)c (V/µs)
0
0
25
50
T
j
(°C)
75
100
125
Figure 11: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
100
90
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
S(cm²)
5/10
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