K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
K9F2808U0C-VCB0,VIB0
FLASH MEMORY
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
1.0
Initial issue.
TBGA PKG Dimension Change
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm
1.A3 Pin assignment of TBGA Package is changed.(Page 4)
(before) NC --> (after) Vss
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 33)
The min. Vcc value 1.8V devices is changed.
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F2808U0C-FCB0,FIB0
K9F2808Q0C-HCB0,HIB0
K9F2816U0C-HCB0,HIB0
K9F2816U0C-PCB0,PIB0
K9F2816Q0C-HCB0,HIB0
K9F2808U0C-HCB0,HIB0
K9F2808U0C-PCB0,PIB0
Some AC parameter is changed(K9F28XXQ0C).
tWC tWH tWP tRC tREH tRP tREA tCEA
Before
After
45
60
15
20
25
40
50
60
15
20
25
40
30
40
45
55
Mar. 13rd 2003
Draft Date
Apr. 15th 2002
Sep. 5th 2002
Remark
Advance
Advance
2.0
Dec.10th 2002
Preliminary
2.1
Mar. 6th 2003
2.2
2.3
Mar. 26th 2003
2.4
New definition of the number of invalid blocks is added.
May. 24th 2003
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb
memory space)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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K9F2808Q0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
K9F2816Q0C-DCB0,DIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-DCB0,DIB0
K9F2808U0C-VCB0,VIB0
FLASH MEMORY
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F2808Q0C-D,H
K9F2816Q0C-D,H
K9F2808U0C-Y,P
K9F2808U0C-D,H
K9F2808U0C-V,F
K9F2816U0C-Y,P
K9F2816U0C-D,H
2.7 ~ 3.6V
X16
X8
Vcc Range
1.7 ~ 1.95V
Organization
X8
X16
TSOP1
TBGA
WSOP1
TSOP1
TBGA
PKG Type
TBGA
FEATURES
•
Voltage Supply
- 1.8V device(K9F28XXQ0C) : 1.7~1.95V
- 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array
- X8 device(K9F2808X0C) : (16M + 512K)bit x 8bit
- X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit
- Data Register
- X8 device(K9F2808X0C) : (512 + 16)bit x 8bit
- X16 device(K9F2816X0C) : (256 + 8)bit x16bit
•
Automatic Program and Erase
- Page Program
- X8 device(K9F2808X0C) : (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F2808X0C) : (16K + 512)Byte
- X16 device(K9F2816X0C) : ( 8K + 256)Word
•
Page Read Operation
- Page Size
- X8 device(K9F2808X0C) : (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Random Access
: 10µs(Max.)
- Serial Page Access : 50ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Unique ID for Copyright Protection
•
Package
- K9F28XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F28XXU0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F28XXX0C-DCB0/DIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F28XXX0C-HCB0/HIB0
63 - Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V or 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be per-
formed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typ-
ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The
I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro-
gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-
intensive systems can take advantage of the K9F28XXX0C’ extended reliability of 100K program/erase cycles by providing
s
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F28XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
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