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K7P401823B-H65000

Description
Standard SRAM, 256KX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
Categorystorage    storage   
File Size411KB,13 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K7P401823B-H65000 Overview

Standard SRAM, 256KX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

K7P401823B-H65000 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Objectid1976775912
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
compound_id9914356
Maximum access time6.5 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B119
length22 mm
memory density4718592 bit
Memory IC TypeSTANDARD SRAM
memory width18
Number of functions1
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
K7P403623B
K7P401823B
Document Title
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
Preliminary
128Kx36 & 256Kx18 SRAM
Revision History
Rev. No.
Rev. 0.0
Rev. 0.1
History
- Preliminary specification release
- Update DC CHARACTERISTICS
x36 : I
DD6
: TBD -> 300, I
DD65
-> 290, I
DD7
-> 280.
x18 : I
DD6
: TBD -> 290, I
DD65
-> 280, I
DD7
-> 270.
- Change simbol in DC CHARACTERISTICS
I
DD6
, I
DD65
, I
DD7
-> I
DD65
, I
DD70
, I
DD75
Draft Date
Oct. 2002
Jan. 2003
Remark
Preliminary
Preliminary
Feb. 2003
Rev. 0.2
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
-1-
Feb. 2003
Rev 0.2

K7P401823B-H65000 Related Products

K7P401823B-H65000 K7P403623B-H75000 K7P403623B-H70000 K7P403623B-H65000 K7P401823B-H70000 K7P401823B-H75000
Description Standard SRAM, 256KX18, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Standard SRAM, 128KX36, 7ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Standard SRAM, 128KX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Standard SRAM, 256KX18, 7ns, CMOS, PBGA119, 14 X 22 MM, BGA-119 Standard SRAM, 256KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction BGA, BGA, BGA, BGA, BGA, BGA,
Contacts 119 119 119 119 119 119
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 6.5 ns 7.5 ns 7 ns 6.5 ns 7 ns 7.5 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
length 22 mm 22 mm 22 mm 22 mm 22 mm 22 mm
memory density 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 18 36 36 36 18 18
Number of functions 1 1 1 1 1 1
Number of terminals 119 119 119 119 119 119
word count 262144 words 131072 words 131072 words 131072 words 262144 words 262144 words
character code 256000 128000 128000 128000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 256KX18 128KX36 128KX36 128KX36 256KX18 256KX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA BGA BGA BGA BGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL BALL BALL BALL BALL
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
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