DRAM MODULE
KMM374F80(8)3BK/BS
Unbuffered 8Mx72 DIMM
(8Mx8 base)
Revision 0.0
Dec. 1997
DRAM MODULE
Revision History
Version 0.0 (Dec, 1997)
KMM374F80(8)3BK/BS
• Removed two AC parameters t
CACP
(access time from CAS) and t
AAP
(access time from col. addr.) in
AC CHARACTERISTICS.
• Changed Module part number from KMM374F80(8)3AK/AS to KMM374F80(8)3BK/BS caused by component revision.
DRAM MODULE
KMM374F80(8)3BK/BS
KMM374F80(8)3BK/BS EDO Mode without buffer
8M x 72 DRAM DIMM with ECC Using 8Mx8, 8K & 4K Refresh, 3.3V
GENERAL DESCRIPTION
The Samsung KMM374F80(8)3BK/BS is a 8Mx72bits
Dynamic RAM high density memory module. The Samsung
KMM374F80(8)3BK/BS consists of nine CMOS 8Mx8bits
DRAMs in SOJ/TSOP-II 400mil packages and one 2K
EEPROM for SPD in 8-pin SOP package mounted on a 168-
pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capaci-
tor is mounted on the printed circuit board for each DRAM.
The KMM374F80(8)3BK/BS is a Dual In-line Memory Module
and is intended for mounting into 168 pin edge connector
sockets.
FEATURES
• Part Identification
Part number
KMM374F803BK/BS
KMM374F883BK/BS
PKG
SOJ/TSOP-II
SOJ/TSOP-II
Ref
4K
8K
CBR ref.
ROR ref.
4K/64ms
4K/64ms
8K/64ms
• New JEDEC standard proposal without buffer
• Serial Presence Detect with EEPROM
• Extended Data Out Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• LVTTL compatible inputs and outputs
• Single +3.3V
±0.3V
power supply
• PCB : Height(1250mil), single sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
HPC
25ns
30ns
PIN CONFIGURATIONS
Pin Front Pin Front Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
CC
DQ14
DQ15
CB0
CB1
V
SS
NC
NC
V
CC
W0
CAS0
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
CAS1
RAS0
OE0
V
SS
A0
A2
A4
A6
A8
A10
A12
V
CC
V
CC
DU
V
SS
OE2
RAS2
CAS2
CAS3
W2
V
CC
NC
NC
CB2
CB3
V
SS
DQ16
DQ17
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
DQ18
DQ19
V
CC
DQ20
NC
DU
NC
V
SS
DQ21
DQ22
DQ23
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
NC
NC
NC
SDA
SCL
V
CC
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
DQ39
DQ40
V
SS
DQ41
DQ42
DQ43
DQ44
DQ45
V
CC
DQ46
DQ47
CB4
CB5
V
SS
NC
NC
V
CC
DU
CAS4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
CAS5
*RAS1
DU
V
SS
A1
A3
A5
A7
A9
A11
*A13
V
CC
DU
DU
V
SS
DU
*RAS3
CAS6
CAS7
DU
V
CC
NC
NC
CB6
CB7
V
SS
DQ48
DQ49
Pin Back
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
DQ50
DQ51
V
CC
DQ52
NC
DU
NC
V
SS
DQ53
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
V
SS
NC
NC
SA0
SA1
SA2
V
CC
PIN NAMES
Pin Name
A0 - A11
A0 - A12
DQ0 - DQ63
W0, W2
OE0, OE2
RAS0, RAS2
CAS0 - CAS7
V
CC
V
SS
NC
DU
SDA
SCL
SA0 -SA2
CB0 - CB7
Function
Address Input(4K ref.)
Address Input(8K ref.)
Data In/Out
Read/Write Enable
Output Enable
Row Address Storbe
Column Address Strobe
Power(+3.3V)
Ground
No Connection
Don′t use
Serial Address /Data I/O
Serial Clock
Address in EEPROM
Check Bit
* These pins are not used in this module.
NOTE : A12 is used for only KMM374F883BK/BS (8K ref.)
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0
W0
OE0
A0-A11(A12)
CAS0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CAS5
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
CAS6
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
CAS7
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
RAS2
W2
OE2
CAS4
KMM374F80(8)3BK/BS
U0
U5
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
CAS1
U1
U6
U2
U7
CAS2
U3
U8
CAS3
NOTE : A12 is used for only
KMM374F883BK/BS (8K ref.)
U4
Serial PD
SCL
A0
A1
A2
SDA
V
CC
.1 or .22uF Capacitor
under each DRAM
Vss
To all DRAMs
SA0 SA1 SA2
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
KMM374F80(8)3BK/BS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
9
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
tended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
*1 : V
CC
+1.3V at pulse width
≤15ns
which is measured at V
CC
.
*2 : -1.3V at pulse width
≤15ns
which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM374F883BK/BS
Min
-
-
KMM374F803BK/BS
Min
-
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Max
1080
990
18
1080
990
990
900
4.5
1080
990
10
5
-
0.4
Max
810
720
18
810
720
900
810
4.5
1080
990
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-5
2.4
-
I
CC1
: Operating Current * ( RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current ( RAS=CAS=W=V
IH
)
I
CC3
: RAS Only Refresh Current * ( CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
: Extended Data Out Mode Current * ( RAS=V
IL
, CAS cycling :
t
HPC
=min)
I
CC5
: Standby Current ( RAS=CAS=W=V
CC
-0.2V)
I
CC6
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0
≤V
IN
≤V
CC
+0.3V, all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V
≤V
OUT
≤V
CC
)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
* NOTE : I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.