K7B163625M
K7B161825M
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial draft
1. Update ICC & ISB values.
1. Change tOE from 3.5ns to 4.0ns at -8 .
2. Change tOE from 3.5ns to 4.0ns at -9 .
3. Change tOE from 3.5ns to 4.0ns at -10 .
1. Change I
SB
value from 130mA to 80mA at -8 .
2. Change I
SB
value from 120mA to 70mA at -9 .
3. Change I
SB
value from 120mA to 60mA at -10 .
1. Change tCYC value from 12ns to 10ns at -9 .
1. Final Spec Release.
Draft Date
March. 17 . 1999
May. 27. 1999
June. 22. 1999
Remark
Preliminary
Preliminary
Preliminary
0.3
Sep. 04. 1999
Preliminary
0.4
1.0
Oct. 28. 1999
Dec. 08. 1999
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
December 1999
Rev 1.0
K7B163625M
K7B161825M
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Burst SRAM
FEATURES
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a lin-
ear burst.
• Three Chip Enables for simple depth expansion with No Data
Contention only for TQFP.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A /119BGA(7x17 Ball Grid Array Package)
GENERAL DESCRIPTION
The K7B163625M and K7B161825M are 18,874,368-bit Syn-
chronous Static Random Access Memory designed for high
performance second level cache of Pentium and Power PC
based System.
It is organized as 512K(1M) words of 36(18) bits and integrates
address and control registers, a 2-bit burst address counter and
added some new functions for high performance cache RAM
applications; GW, BW, LBO, ZZ. Write cycles are internally self-
timed and synchronous.
Full bus-width write is done by GW, and each byte write is per-
formed by the combination of WEx and BW when GW is high.
And with CS
1
high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status pro-
cessor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated internally in
the system′s burst sequence and are controlled by the burst
address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(linear
or interleaved).
ZZ pin controls Power Down State and reduces Stand-by cur-
rent regardless of CLK.
The K7B163625M and K7B161825M are fabricated using SAM-
SUNG′s high performance CMOS technology and is available
in a 100pin TQFP and 119BGA package. Multiple power and
ground pins are utilized to minimize ground bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol -85 -90 -10 Unit
t
CYC
t
CD
t
OE
10
10
12
ns
ns
ns
8.5 9.0 10.0
4.0 4.0 4.0
LOGIC BLOCK DIAGRAM
CLK
LBO
CONTROL
REGISTER
ADV
ADSC
BURST CONTROL
LOGIC
BURST
ADDRESS
COUNTER
A
0
~A
1
A
0
~A
18
or A
0
~A
19
ADDRESS
REGISTER
A
2
~A
18
or A
2
~A
19
A′
0
~A′
1
512Kx36 , 1Mx18
MEMORY
ARRAY
ADSP
CS
1
CS
2
CS
2
GW
BW
WEx
(x=a,b,c,d or a,b)
OE
ZZ
DATA-IN
REGISTER
CONTROL
REGISTER
CONTROL
LOGIC
OUTPUT
BUFFER
DQa
0
~ DQd
7
or DQa0 ~ DQb7
DQPa ~ DQPd
DQPa,DQPb
-2-
December 1999
Rev 1.0
K7B163625M
K7B161825M
PIN CONFIGURATION
(TOP VIEW)
512Kx36 & 1Mx18 Synchronous SRAM
ADSC
ADSP
WEb
WEa
ADV
83
N.C.
N.C.
CLK
CS
1
CS
2
CS
2
V
DD
GW
V
SS
BW
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
19
A
18
A
11
A
12
A
13
A
14
A
15
A
16
PIN NAME
SYMBOL
A
0
- A
19
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,42
43,44,45,46,47,48,49
50 80,81,82,99,100
83
84
85
89
98
97
92
93,94
86
88
87
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,41,65,91
17,40,67,90
1,2,3,6,7,14,16,25,28,29,
30,38,39,51,52,53,56,57,
66,75,78,79,95,96
58,59,62,63,68,69,72,73
8,9,12,13,18,19,22,23
74,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
ADV
ADSP
ADSC
CLK
CS
1
CS
2
CS
2
WEx(x=a,b)
OE
GW
BW
ZZ
LBO
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
LBO
V
SS
DQa
0
~ a
7
DQb
0
~ b
7
DQPa, Pb
V
DDQ
V
SSQ
Data Inputs/Outputs
Output Power Supply
(2.5V or 3.3V)
Output Ground
Notes :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
0
DQb
1
V
SSQ
V
DDQ
DQb
2
DQb
3
N.C.
V
DD
N.C.
V
SS
DQb
4
DQb
5
V
DDQ
V
SSQ
DQb
6
DQb
7
DQPb
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7B161825M(1Mx18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQPa
DQa
7
DQa
6
V
SSQ
V
DDQ
DQa
5
DQa
4
V
SS
N.C.
V
DD
ZZ
DQa
3
DQa
2
V
DDQ
V
SSQ
DQa
1
DQa
0
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
-4-
December 1999
Rev 1.0
Electronics Design Contest
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