2N6519
HIGH VOLTAGE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Derate above 25°C
Junction Temperature
Storage Temperature
•
Refer to 2N6520 for graphs
1.Emitter 2. Base 3. Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Rating
-300
-300
-5
-500
-250
0.625
5
150
-55 ~ 150
Unit
V
V
V
mA
mA
W
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -200V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
V
CE
= -10V, I
C
= -100mA
V
CE
= -20V, I
C
= -10mA
V
CB
= -20V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B
1= -10mA
V
CC
= -100V, I
C
= -50mA
I
B
1=I
B
2=10mA
Min
-300
-300
-5
-50
-50
30
45
45
40
20
Max
Unit
V
V
V
nA
nA
270
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter Saturation Voltage
V
BE
(sat)
Base Emitter On Voltage
* Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Turn On Time
Turn Off Time
V
BE
(on)
f
T
C
CB
C
EB
T
ON
T
OFF
40
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. B
©
1999 Fairchild Semiconductor Corporation
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Formative or
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This datasheet contains the design specifications for
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