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2SC5001/QR

Description
Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size57KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SC5001/QR Overview

Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, 3 PIN

2SC5001/QR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionCPT3, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)10 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-G2
JESD-609 codee2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment10 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.25 V
Base Number Matches1
2SC5001
Transistors
Low V
CE(sat)
Transistor (Strobe flash)
(20V, 10A)
2SC5001
Features
1) Low saturation voltage, typically V
CE(sat)
= 0.13V at I
C
/
I
B
= 4A / 50mA.
2) High current capacity, typically I
C
= 10A for DC
operation and 15A for 10ms pulse.
3) Complements the 2SA1834.
External dimentions
(Unit : mm)
CPT3
6.5
5.1
2.3
0.5
5.5
1.5
0.9
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5001
CPT3
QR
TL
2500
(1)Base
(2)Collector
(3)Emitter
0.75
0.65
0.9
(1)
2.3
(2)
(3)
2.3
0.8Min.
0.5
1.0
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
Tstg
Limits
30
20
6
10
15
2
1
10
150
−55
to
+150
Unit
V
V
V
A
A
A
W
W(Tc=25
°C
)
°C
°C
Single pulse
Pw=10ms
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
Cob
Min.
30
20
6
120
82
Typ.
0.13
0.9
150
220
Max.
1
1
0.25
1.2
390
Unit
V
V
V
µA
µA
V
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=20V
V
EB
=5V
I
C
/I
B
=4A/0.05A
I
C
/I
B
=4A/0.05A
V
CE
/I
C
=2V/0.5A
V
CE
=2V
, I
C
=4A
V
CE
=5V
, I
E
= −1.5A
, f=50MHz
V
CB
=10V
, I
E
=0A
, f=1MHz
Conditions
Rev.A
2.5
1.5
9.5
1/2

2SC5001/QR Related Products

2SC5001/QR 2SC5001TL/QR
Description Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, 3 PIN Small Signal Bipolar Transistor, 10A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, CPT3, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction CPT3, 3 PIN SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code _compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 10 A 10 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 82 82
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e2 e2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power consumption environment 10 W 10 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN COPPER TIN COPPER
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 10 10
transistor applications AMPLIFIER SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
VCEsat-Max 0.25 V 0.25 V
Base Number Matches 1 1
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