V826632G24SATG-D3 datasheet, PDF

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V826632G24SATG-D3: DescriptionDDR DRAM Module, 32MX64, 0.65ns, CMOS, PDMA200; Categorystorage storage; File Size250KB，15 Pages; ManufacturerProMOS Technologies Inc

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V826632G24SATG-D3 Overview

DDR DRAM Module, 32MX64, 0.65ns, CMOS, PDMA200

V826632G24SATG-D3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ProMOS Technologies Inc
Reach Compliance Code	compliant
Maximum access time	0.65 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
JESD-609 code	e4
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	200
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	3.2 mA
Nominal supply voltage (Vsup)	2.6 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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V826632G24SA

256 MB 200-PIN DDR UNBUFFERED SODIMM

32M x 64

Features

■

JEDEC 200 Pin DDR Unbuffered Small-Outline,

Dual In-Line memory module (SODIMM);

33,554,432 x 64 bit organization.

■

Utilizes High Performance 32M x 8 DDR

SDRAM in TSOPII-66 Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

Module Speed

Description

The V826632G24SA memory module is

organized 33,554,432 x 64 bits in a 200 pin memory

module. The 32M x 64 memory module uses 8

ProMOS 32M x 8 DDR SDRAM. The x64 modules

are ideal for use in high performance computer

systems where increased memory density and fast

access times are required.

Units

Clock Frequency

200

166

143

133

125

MHz

Module Speed

200

(PC400C) (PC400B) (PC400A) (PC333) (PC266A) (PC266B) (PC200)

(max.)

PC1600 (100MHz @ CL2)

Clock Cycle Time

7.5

PC2100B (133MHz @ CL2.5) 7.5

CAS Latency = 2

PC2100A (133MHz @ CL2)

Clock Cycle Time

7.5

PC2700 (166MHz @ CL2.5)

CAS Latency = 2.5

Clock Cycle Time

CAS Latency = 3

RCD

tRP parameter

tRCD parameter

CLK

V826632G24SA Rev. 1.1 February 2004

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