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UNR311T

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSSMINI3-F1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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UNR311T Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSSMINI3-F1, 3 PIN

UNR311T Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 2.136
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Transistors with built-in Resistor
UNR3113, UNR311A, UNR311T
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
Features
Optimum for downsizing of the equipment and high-density mount-
ing
Contribute for low power consumption
0.33
+0.05
–0.02
3
0.10
+0.05
–0.02
(0.40) (0.40)
0.80
±0.05
1.20
±0.05
0.15 min.
0.23
+0.05
–0.02
1
2
Resistance by Part Number
UNR3113
UNR311A
UNR311T
Marking symbol (R
1
)
6C
47 kΩ
6X
100 kΩ
EY
22 kΩ
(R
2
)
47 kΩ
100 kΩ
47 kΩ
0 to 0.01
0.52
±0.03
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
100
125
−55
to
+125
Unit
V
V
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Internal Connection
R
1
B
R
2
E
C
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
Emitter cutoff
current
Forward current
transfer ratio
UNR3113, 311A
UNR311T
UNR3113, 311A
UNR311T
V
CE(sat)
V
OH
V
OL
UNR311A
UNR311T
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −5.0
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
−4.9
0.2
h
FE
V
CE
= −10
V, I
C
= −5
mA
80
80
400
0.25
V
V
V
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
0.1
0.5
0.1
0.2
mA
Typ
Max
Unit
V
V
µA
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage UNR3113
0.15 max.
0.15 min.
0.80
±0.05
1.20
±0.05
Publication date: May 2002
SJH00041CED
1

UNR311T Related Products

UNR311T UNR311A
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSSMINI3-F1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SSSMINI3-F1, 3 PIN
Maker Panasonic Panasonic
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO IS 2.136 BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80
JESD-30 code R-PDSO-F3 R-PDSO-F3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz
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