ZTX600A datasheet, PDF - EEWORLD Datasheet

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ZTX600A: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size93KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX600A Overview

Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX600A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	140 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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ZTX600 Not Recommended for

New Design Please Use ZTX601

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 2 JUNE 94

FEATURES

* 160 Volt V

CEO

* 1 Amp continuous current

* Gain of 5K at I

C

=1 Amp

* P

tot

= 1 Watt

ZTX600

ZTX601

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

at T

amb

=25°C

derate above 25°C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX600

160

140

10

4

1

5.7

E-Line

TO92 Compatible

ZTX601

180

160

UNIT

V

A

W

mW/ °C

°C

Operating and Storage Temperature Range

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

160

140

10

0.01

10

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

0.75

0.85

1.7

1.5

0.1

10

1.1

1.2

1.9

1.7

3-206

0.75

0.85

1.7

1.5

ZTX600

MIN. TYP.

Collector-Base

V

(BR)CBO

Breakdown Voltage

Collector-Emitter

V

(BR)CEO

Breakdown Voltage

Emitter-Base

V

(BR)EBO

Breakdown Voltage

Collector Cut-Off

Current

I

CBO

180

160

10

ZTX601

MAX. MIN. TYP.

MAX.

V

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

UNIT CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=140V

V

CB

=160V

V

CB

=140V,

T

=

=100°C

V

CB

=160V,

T

=

=100°C

V

EB

=8V

V

CES

=140V

V

CES

=160V

I

C

=0.5A, I

B

=5mA*

I

C

=1A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

IC=1A, V

CE

=5V*

0.01

10

0.1

Emitter Cut-Off

Current

Colllector-Emitter

Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

10

1.1

1.2

1.9

1.7

V

ZTX600A Related Products

	ZTX600A	ZTX600B
Description	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	140 V	140 V
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	1000	5000
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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