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Datasheet> All Categories > Discrete semiconductor> The transistor> UPA831TC-FB
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UPA831TC-FB

Description
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size79KB，16 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

UPA831TC-FB Overview

RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, THIN, ULTRA SUPER MINIMOLD PACKAGE-6

UPA831TC-FB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Objectid1924537300
package instructionTHIN, ULTRA SUPER MINIMOLD PACKAGE-6
Reach Compliance Codecompliant
compound_id293895859
Other featuresLOW NOISE
Maximum collector current (IC)0.065 A
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage10 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F6
JESD-609 codee0
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)7000 MHz

UPA831TC-FB Preview

DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA831TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
DESCRIPTION
The
µ
PA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
UHF band.
FEATURES
• Low noise
Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP.
@f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• High gain
Q1 :
|S
21e
|
2
= 9.0 dB TYP., Q2 :
|S
21e
|
2
= 12.0 dB TYP.
@f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5006, 2SC5007)
BUILT-IN TRANSISTORS
Q1
3-pin ultra super minimold part No.
2SC5006
Q2
2SC5007
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
side of the tape.
µ
PA831TC
µ
PA831TC-T1
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA831TC.)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14554EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
µ
PA831TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Ratings
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Q1
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Unit
Q2
20
10
1.5
65
200 in 1 element
230 in 2 elements
V
V
V
mA
mW
20
12
3
100
200 in 1 element
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
150
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm glass epoxy substrate.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
(1) Q1
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
NF
2
Conditions
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
MIN.
−
−
70
3.0
−
7.0
−
TYP.
−
−
−
4.5
0.7
9.0
1.2
MAX.
1.0
1.0
140
−
1.5
−
2.5
Unit
µ
A
µ
A
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
GHz
pF
dB
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2
Data Sheet P14554EJ1V0DS00
µ
PA831TC
(2) Q2
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
NF
2
Conditions
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
MIN.
−
−
70
4.5
−
10.0
−
TYP.
−
−
−
7.0
−
12.0
1.4
MAX.
0.8
0.8
150
−
0.9
−
2.7
Unit
µ
A
µ
A
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
GHz
pF
dB
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value of Q1
h
FE
Value of Q2
FB
24
70 to 140
70 to 150
Data Sheet P14554EJ1V0DS00
3
µ
PA831TC
TYPICAL CHARACTERISTICS (T
A
= +25°C)
°
Q1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
230
200
Per Element
2 Elements in total
Free Air
230
200
Per Element
Q2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2 Elements in total
Free Air
Total Power Dissipation P
T
(mW)
100
Total Power Dissipation P
T
(mW)
50
100
150
100
0
0
0
0
50
100
150
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
V
CE
= 3 V
20
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Collector Current I
C
(mA)
10
Collector Current I
C
(mA)
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
10
0
0
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
20
18
I
B
= 160
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
25
Collector Current I
C
(mA)
Collector Current I
C
(mA)
16
14
12
10
8
6
4
2
0
20
I
B
= 160
µ
A
I
B
= 140
µ
A
15
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
10
5
0
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
4
Data Sheet P14554EJ1V0DS00
µ
PA831TC
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
DC Current Gain h
FE
DC Current Gain h
FE
1 000
V
CE
= 3 V
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
100
10
0.1
1
10
100
10
0.1
1
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7.00
Gain Bandwidth Product f
T
(GHz)
6.00
5.00
4.00
3.00
2.00
1.00
0.00
V
CE
= 3 V
f = 1 GHz
8.00
Gain Bandwidth Product f
T
(GHz)
10
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14.00
Insertion Power Gain
S
21e
2
(dB)
12.00
10.00
8.00
6.00
4.00
2.00
V
CE
= 3 V
f = 1 GHz
16.00
Insertion Power Gain
S
21e
2
(dB)
14.00
12.00
10.00
8.00
6.00
4.00
2.00
1
10
Collector Current I
C
(mA)
100
100
V
CE
= 3 V
7.00 f = 1 GHz
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1
10
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
100
1
1
10
Collector Current I
C
(mA)
100
Data Sheet P14554EJ1V0DS00
5
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