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PTVA047002EV

Description
Thermally-Enhanced High Power RF LDMOS FET
File Size363KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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PTVA047002EV Overview

Thermally-Enhanced High Power RF LDMOS FET

PTVA047002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 470 – 806 MHz
Description
The PTVA047002EV LDMOS FET is designed for use in power amplifier
applications in the 470 MHz to 806 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA047002EV
Package H-36275-4
DVB-T Performance
Drain Efficiency, Gain vs Frequency
V
DD
= 50 V, I
DQ
= 1.2 A, P
OUT
= 135 W avg
34
Features
Input matched
Integrated ESD protection
Low thermal resistance
Drain Efficiency (%), Gain (dB)
30
26
22
18
14
Drain Efficiency
High gain
Thermally enhanced package
RoHS compliant
Capable of withstanding a 10:1 VSWR at
130 W average power under DVB-T signal
condition
Gain
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
ptva047002ev_g5
450 500 550 600 650 700 750 800 850
Frequency (MHz)
RF Characteristics
DVB-T (8K OFDM, 64QAM) Characteristics
(tested in Infineon test fixture, narrowband 806 MHz)
V
DD
= 50 V, I
DQ
= 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability
Characteristic
Average Output Power
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
P
OUT
G
ps
h
D
ACPR
Min
16.5
24
Typ
130
17.5
29
–29.5
Max
–25
Unit
W
dB
%
dBc
(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 04.1, 2015-07-08

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