PXAC192908FV
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 1930 – 1995 MHz
Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1995 MHz frequency band. Features
include dual-path design, high gain and thermally-enhanced package
with earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC192908FV
Package H-37275G-6/2
V
DD
= 28 V, I
DQ
= 600 mA, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Peak/Average Ratio, Gain (dB)
24
20
16
12
8
4
0
c192908fc_g1
Single-carrier WCDMA Drive-up
Features
•
•
60
Broadband internal input and output matching
Asymmetric Doherty design
- Main: P
1dB
= 120 W Typ
- Peak: P
1dB
= 220 W Typ
Typical Pulsed CW performance, 1990 MHz, 28 V,
combined outputs
- Output power at P
1dB
= 240 W
- Efficiency = 54%
- Gain = 14 dB
Capable of handling 10:1 VSWR
@28 V, 240 W
(CW) output power
Integrated ESD protection
Human Body Model, Class 2 (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
•
Efficiency
40
20
Gain
Efficiency (%)
0
-20
-40
-60
•
•
•
•
•
PAR @ 0.01% CCDF
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, I
DQ
= 0.6 A, V
GS(PEAK)
= 0.55 V, P
OUT
= 70 W avg, ƒ
1
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
13
45
—
Typ
14
49
–28
Max
—
—
–25
Unit
dB
%
dBc
h
D
ACPR
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.2, 2015-07-14
PXAC192908FV
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
R
DS(on)
V
GS
V
GS
I
GSS
Min
65
—
—
—
—
2.5
0.45
—
Typ
—
—
—
0.11
0.06
2.65
0.55
—
Max
—
1
10
—
—
2.75
0.75
1
Unit
V
µA
µA
W
W
V
V
µA
On-State Resistance (main)
(peak)
Operating Gate Voltage (main)
(peak)
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 0.6 A
V
DS
= 28 V, I
DQ
= 0 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (Doherty, T
CASE
= 70°C, 200 W CW, 1960 MHz,
28V, I
DQ (main)
= 600 mA, V
GS (peak)
= 0.55 V)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.32
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC192908FV V1
PXAC192908FV V1 R250
Order Code
PXAC192908FVV1XWSA1
PXAC192908FVV1R250XTMA1
Package Description
H-37275G-6/2, earless flange
H-37275G-6/2, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02.2, 2015-07-14
PXAC192908FV
Typical Performance
(data taken in a production Doherty test fixture)
Single-carrier WCDMA
Broadband Performance
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 48.45dBm,
3GPP WCDMA signal, PAR = 10 dB
20
18
55
45
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 48.45dBm,
3GPP WCDMA signal, PAR = 10 dB
-10
-15
Return Loss
-5
-10
-15
-20
-25
-30
c192908fc_g3
Efficiency (%)
Gain (dB)
16
14
Gain
35
25
15
5
2150
-20
-25
-30
-35
-40
1750
12
10
1750
ACP Up
c192908fc_g2
1850
1950
2050
1850
1950
2050
-35
2150
Frequency (MHz)
Frequency (MHz)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 600 mA,
3GPP WCDMA signal, PAR = 10 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Pulsed CW Performance
V
DD
= 28 V, I
DQ
= 600mA
-20
20
1930 MHz
1960 MHz
1990 MHz
60
ACP Up & Low (dBc)
15
Gain
40
-40
1930 ACPL
1930 ACPU
1960 ACPL
1960 ACPU
1990 ACPL
1990 ACPU
c192908fc_g4
Efficiency
10
20
-50
-60
25
30
35
40
45
50
55
5
c192908fc_g5
28
32
36
40
44
48
52
56
60
0
Average Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02.2, 2015-07-14
Efficiency (%)
Gain (dB)
-30
Return Loss (dB)
ACP Up (dBc)
Efficiency
PXAC192908FV
Typical Performance
(cont.)
Pulsed CW Performance
at various V
DD
Small Signal CW Performance
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 750 mA
I
DQ
= 600 mA, ƒ = 1990 MHz
60
Efficiency
20
20
IRL
-2
Efficiency (%)
Gain (dB)
15
Gain
40
Gain (dB)
18
-6
16
-10
10
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
5
c192908fc_g6
20
14
Gain
-14
28
36
44
52
60
0
12
1750
1800
1850
1900
1950
2000
c192908fc_g7
-18
2050
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance
– Pulsed CW signal: 16 µs, 10% duty cycle, V
DD
= 28 V, I
DQ
= 600 mA
P
1dB
Max Output Power
Freq
[MHz]
1930
1960
1990
Zs
[
W]
8.0 – j11.0
11.9 – j11.9
18.0 – j10.4
Zl
[
W
]
2.1 – j4.7
2.1 – j4.7
2.1 – j4.8
Gain
[dB]
18.0
18.2
18.3
P
OUT
[dBm]
51.10
51.10
50.91
P
OUT
[W]
128.8
128.8
123.3
PAE
[%]
50.4
51.0
49.7
Zl
[
W
]
3.6 – j2.7
3.6 – j2.9
3.63 – j2.6
Gain
[dB]
20.2
20.2
20.5
Max PAE
P
OUT
[dBm]
50.12
50.08
49.78
P
OUT
[W]
102.8
101.9
95.1
PAE
[%]
62.5
61.6
61.3
Peak Side Load Pull Performance
– Pulsed CW signal: 16 µs, 10% duty cycle, V
DD
=28 V, I
DQ
= 90 mA
P
1dB
Max Output Power
Freq
[MHz]
1930
1960
1990
Zs
[
W]
1.7 – j5.3
2.0 – j5.8
3.2 – j6.9
Zl
[
W
]
5.3 – j3.8
5.3 – j3.7
6.3 – j2.8
Gain
[dB]
18.0
18.4
18.7
P
OUT
[dBm]
54.24
54.16
54.08
P
OUT
[W]
265.5
260.6
255.9
PAE
[%]
55.6
55.7
54.7
Zl
[
W
]
2.9 – j2.0
2.9 – j2.2
2.9 – j2.2
Gain
[dB]
19.6
20.1
20.3
Max PAE
P
OUT
[dBm]
53.04
52.90
52.88
P
OUT
[W]
201.4
195.0
194.1
PAE
[%]
66.3
66.0
65.0
Data Sheet
4 of 9
Rev. 02.2, 2015-07-14
Input Return Loss (dB)
Automotive Electronics
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