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2SD2719(TE85L,F)

Description
800mA, 70V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size203KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

2SD2719(TE85L,F) Overview

800mA, 70V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD2719(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage70 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PDSO-G3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SD2719
TOSHIBA Transistor
Silicon NPN Epitaxial Type (Darlington Power)
2SD2719
Solenoid Drive Applications
Motor Drive Applications
High DC current gain: h
FE
= 2000 (min) (V
CE
= 2 V, I
C
= 1 A)
Zener diode included between collector and base
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
t
=
10 s
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note)
T
j
T
stg
Rating
50
60±10
8
0.8
3
0.5
0.8
1.25
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
1. Base
2. Emitter
3. Collector
JEDEC
JEITA
TOSHIBA
2-3S1C
Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm
2
)
Weight: 0.01 g (typ.)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≒5
Emitter
≒300
Ω
Start of commercial production
2006-02
1
2013-11-01

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