2SC3416-C datasheet, PDF - EEWORLD Datasheet

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2SC3416-C: DescriptionPower Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size47KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC3416-C Overview

Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

2SC3416-C Parametric

Parameter Name	Attribute value
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
Base Number Matches	1

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Ordering number:ENN1411C

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1352/2SC3416

Ultrahigh-Definition CRT Display

Video Output Applications

Applications

· Color TV chroma output, high-voltage driver

applicatons.

Package Dimensions

unit:mm

2009B

[2SA1352/2SC3416]

8.0

4.0

2.7

Features

· High breakdown voltage : V

CEO

≤200V.

· Small reverse transfer capacitance and excellent high

frequency characteristics :

=1.2pF (NPN), 1.7pF (PNP).

· Adoption of FBET process.

3.0

1.5

7.0

1.6

0.8

0.6

3.0

11.0

15.5

0.5

( ) : 2SA1352

2.4

4.8

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Conditions

1.2

1 : Emitter

2 : Collector

3 : Base

SANYO : TO-126

Ratings

(–)200

(–)5

(–)100

(–)200

1.2

Unit

Tc=25˚C

Tstg

150

–55 to +150

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Symbol

ICBO

IEBO

hFE

60 to 120

100 to 200

160 to 320

VCB=(–)200V, IE=0

VEB=(–)4V, IC=0

VCE=(–)10V, IC=(–)10mA

VCE=(–)30V, IC=(–)10mA

Conditions

Ratings

min

typ

max

(–)0.1

320

MHz

Unit

µA

* : 2SA1352/2SC3416 are classified by 10mA h

as follows :

Rank

hFE

40 to 80

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83002TN (KT)/71598HA (KT)/10996TS (KOTO) X-6218/3237KI/3125KI/1114KI , MT No.1411-1/5

2SA1352/2SC3416

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2002. Specifications and information herein are subject to

change without notice.

PS No.1411-5/5

2SC3416-C Related Products

	2SC3416-C	2SA1352-C	2SA1352-D	2SA1352-E	2SA1352-F	2SC3416-F	2SC3416-E	2SC3416-D
Description	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	0.1A, 200V, PNP, Si, POWER TRANSISTOR, TO-126	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	0.1A, 200V, PNP, Si, POWER TRANSISTOR, TO-126	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN	0.1A, 200V, NPN, Si, POWER TRANSISTOR, TO-126	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	60	100	160	160	100	60
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power dissipation(Abs)	5 W	5 W	5 W	5 W	5 W	5 W	5 W	5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	70 MHz	70 MHz	70 MHz	70 MHz	70 MHz	70 MHz	70 MHz	70 MHz
Parts packaging code	SIP	-	SIP	-	SIP	SIP	-	SIP
Contacts	3	-	3	-	3	3	-	3
ECCN code	EAR99	-	EAR99	-	EAR99	EAR99	-	EAR99
Objectid	-	1481156310	1976853249	1481156316	1976853251	1976853259	1481156376	-

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