2SC4725TLN datasheet, PDF - EEWORLD Datasheet

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2SC4725TLN: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, EMT3, SC-75A, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size59KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SC4725TLN Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, EMT3, SC-75A, 3 PIN

2SC4725TLN Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SC-75A
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	56
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e1
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1500 MHz
Base Number Matches	1

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2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K

Transistors

High-Frequency Amplifier Transistor

(18V, 50mA, 1.5GHz)

2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K

Features

1) High transition frequency. (Typ. f

= 1.5GHz)

2) Small rbb’⋅Cc and high gain. (Typ. 6ps)

3) Small NF.

External dimensions

(Units : mm)

2SC5661

0.2

1.2

0.8

(2)

(3)

(1)

0.2

1.2

0.32

0.4 0.4

0.5

0.22

0.8

0.15Max.

Absolute maximum ratings

(Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

2SC5661, 2SC4725

Collector power

dissipation

2SC4082, 2SC3837K

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

Tstg

Limits

0.15

0.2

150

−55~+150

Unit

°C

ROHM : VMT3

(1) Base

(2) Emitter

(3) Collector

(1)

(2)

0.2

0.5 0.5

2SC4725

0.3

(3)

0.13

0to0.1

1.0

0.8

1.6

0.15

0.2

1.6

0.1Min.

(1)

2SC4082

Type

Package

Marking

Code

Basic ordering unit

(pieces)

∗

Denotes h

0to0.1

ROHM : EMT3

EIAJ : SC-75A

(1) Emitter

(2) Base

(3) Collector

0.55

0.65 0.65

(3)

2SC5661

VMT3

∗

T2L

8000

2SC4725

EMT3

∗

3000

2SC4082

UMT3

∗

T106

3000

2SC3837K

SMT3

∗

T146

3000

0.3

Packaging specifications and h

1.25

2.1

(2)

1.3

2.0

0.7

0.1to0.4

0to0.1

ROHM : UMT3

EIAJ : SC-70

(1) Emitter

(2) Base

(3) Collector

0.15

0.2

Each lead has same dimensions

(1)

2SC3837K

0.4

(3)

1.6

2.8

0.95 0.95

1.9

2.9

(2)

0.7

0.9

0.3to0.6

0to0.1

ROHM : SMT3

EIAJ : SC-59

Each lead has same dimensions

Electrical characteristics

(Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Collector-base time constant

Noise factor

Symbol

CBO

CEO

EBO

CBO

EBO

CE(sat)

Cob

Min.

−

600

−

Typ.

−

1500

0.9

4.5

Max.

−

0.5

180

−

1.5

−

Unit

µA

−

MHz

10µA

1mA

10µA

10V

20mA/4mA

10V/10mA

10V , I

10mA , f

200MHz

10V , I

0A , f

1MHz

10V , I

10mA , f

31.8MHz

12V , I

2mA , f

200MHz , Rg

50Ω

Conditions

rbb'·Cc

0.8

(1) Emitter

(2) Base

(3) Collector

0.15

1.1

1/1

2SC4725TLN Related Products

	2SC4725TLN	2SC4082T106N	2SC5661T2LN
Description	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, EMT3, SC-75A, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, UMT3, SC-70, 3 PIN	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, VMT3, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	SC-75A	SC-70	SC-105
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3
Reach Compliance Code	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A
Collector-based maximum capacity	1.5 pF	1.5 pF	1.5 pF
Collector-emitter maximum voltage	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	56	56	56
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-F3
JESD-609 code	e1	e1	e2
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.2 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN SILVER COPPER	Tin/Silver/Copper (Sn/Ag/Cu)	TIN COPPER
Terminal form	GULL WING	GULL WING	FLAT
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1500 MHz	1500 MHz	1500 MHz
Base Number Matches	1	1	1

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