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IRH9150

Description
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    The transistor   
File Size180KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRH9150 Overview

Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-2

IRH9150 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD-90879D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
Product Summary
Part Number
IRH9150
IRH93150
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.075Ω
0.075Ω
IRH9150
100V, P-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
®
I
D
-22A
-22A
International Rectifier’s RADHard HEXFET
®
technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of
proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications such
as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease
of paralleling and temperature stability of electrical
parameters.
TO-204AE
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-22
-14
-88
150
1.2
± 20
500
-22
1.5
-23
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
g
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