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IRHM57264SEDPBF

Description
Power Field-Effect Transistor, 35A I(D), 250V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size95KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRHM57264SEDPBF Overview

Power Field-Effect Transistor, 35A I(D), 250V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

IRHM57264SEDPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.066 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 93798A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254)
Product Summary
Part Number Radiation Level
IRHM57264SE 100K Rads (Si)
R
DS(on)
0.066Ω
I
D
35A
*
IRHM57264SE
250V, N-CHANNEL
R
5
TECHNOLOGY
™
TO-254
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electically Isolated
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Œ
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy

Avalanche Current
Œ
Repetitive Avalanche Energy
Œ
Peak Diode Recovery dv/dt
Ž
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by internal wire diameter
For footnotes refer to the last page
35*
26
140
250
2.0
±20
500
35
25
5.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
g
www.irf.com
1
3/2/00

IRHM57264SEDPBF Related Products

IRHM57264SEDPBF IRHM57264SEUPBF
Description Power Field-Effect Transistor, 35A I(D), 250V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, 35A I(D), 250V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant compliant
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (ID) 35 A 35 A
Maximum drain-source on-resistance 0.066 Ω 0.066 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code S-MSFM-P3 S-MSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 140 A 140 A
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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