2N3904-O-C datasheet, PDF - EEWORLD Datasheet

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2N3904-O-C: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size379KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2N3904-O-C Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE PACKAGE-3

2N3904-O-C Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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2N3904

Elektronische Bauelemente

0.2A, 60V

NPN General Purpose Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

Power Dissipation P

CM

: 625mW (Ta=25°C)

Collector Current I

CM

: 200mA

Collector – Base Voltage V

(BR)CBO

: 60V

G

H

TO-92

1

Emitter

2

Base

3

Collector

J

A

D

B

REF.

A

B

C

D

E

F

G

H

J

K

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

CLASSIFICATION OF h

FE(1)

Product-Rank

Range

2N3904-O

100~200

2N3904-Y

200~300

2N3904-G

300~400

E

K

C

F

Collector

3

2

Base

1

Emitter

ABSOLUTE MAXIMUM RATINGS

(T

a

= 25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current -Continuous

Cpllector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

60

40

6

0.2

625

+150, -55 ~ +150

Unit

V

A

mW

°C

ELECTRICAL CHARACTERISTICS

(T

a

= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter - Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CEO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

f

T

Min.

60

40

6

-

100

60

-

300

Typ.

-

Max.

-

0.1

400

-

0.3

0.95

-

Unit

V

Test Conditions

I

C

=10µA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10µA, I

C

=0

V

CB

=60V, I

E

=0

V

CE

=40V, I

B

=0

V

EB

=5V, I

C

=0

V

CE

=1V, I

C

=10mA

V

CE

=1V, I

C

=50mA

µ

A

µ

A

µ

A

V

MHz

I

C

=50mA, I

B

=5mA

I

C

=50mA, I

B

=5mA

V

CE

=20V, I

C

=10mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2010 Rev.B

Page 1 of 3

2N3904-O-C Related Products

	2N3904-O-C	2N3904-G	2N3904-G-C	2N3904-C	2N3904-O	2N3904-Y-C	2N3904-Y
Description	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN AND LEAD FREE PACKAGE-3	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT PACKAGE-3
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	HALOGEN AND LEAD FREE PACKAGE-3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	300	300	60	100	200	200
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
Base Number Matches	1	1	1	1	1	1	1

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