Preliminary Technical Information
TrenchP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
V
DSS
I
D25
R
DS(on)
=
=
≤
- 200V
- 32A
130mΩ
Ω
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
D (Tab)
G
DS
D (Tab)
G
D
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 200
- 200
+
15
+
25
- 32
- 96
- 32
1
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
g
g
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300
260
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P)
1.13 / 10
TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±
15V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
- 200
- 2.0
- 4.0
V
V
±100
nA
- 25
μA
-1.25 mA
130 mΩ
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
DS100288A(11/10)
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-247 &TO-3P
0.50
0.21
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= - 25V, f = 1MHz
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
18
30
14.5
565
105
32
15
57
12
185
66
45
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
°C/W
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= - 32A, V
GS
= 0V, Note 1
I
F
= -16A, -di/dt = -100A/μs
V
R
= -100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
- 32
- 128
-1.3
190
1.7
-17.8
A
A
V
ns
μC
A
Note
1: Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
TO-263 Outline
TO-3P Outline
Pins:
1 - Gate
3 - Source
2,4 - Drain
TO-220 Outline
TO-247 Outline
Pins:
1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 1. Output Characteristics @ T
J
= 25ºC
-35
-30
-25
V
GS
= -10V
- 8V
- 7V
- 6V
-80
-120
V
GS
= -10V
- 8V
-100
- 7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
-20
-15
-10
-5
- 4V
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
I
D
- Amperes
-60
- 6V
-40
- 5V
-20
- 5V
0
0
-5
-10
-15
-20
-25
-30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
-35
-30
-25
V
GS
= -10V
- 7V
- 6V
2.4
2.2
2.0
Fig. 4. R
DS(on)
Normalized to I
D
= -16A vs.
Junction Temperature
V
GS
= -10V
I
D
= - 32A
R
DS(on)
- Normalized
I
D
- Amperes
1.8
1.6
1.4
1.2
1.0
0.8
I
D
= -16A
-20
- 5V
-15
-10
-5
0
0
-1
-2
-3
-4
-5
-6
-7
-8
- 4V
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= -16A vs.
Drain Current
2.4
2.2
2.0
1.8
1.6
1.4
T
J
= 25ºC
1.2
1.0
0.8
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
V
GS
= -10V
T
J
= 125ºC
-25
-35
-30
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
-20
-15
-10
-5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 7. Input Admittance
-55
-50
-45
-40
50
60
T
J
= - 40ºC
Fig. 8. Transconductance
-30
-25
-20
-15
-10
-5
0
-3.0
T
J
= 125ºC
25ºC
- 40ºC
g
f s
- Siemens
I
D
- Amperes
-35
40
25ºC
30
125ºC
20
10
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-100
-90
-80
-70
-10
-9
-8
-7
V
DS
= -100V
I
D
= -16A
I
G
= -1mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-60
-50
-40
-30
-20
-10
0
-0.3
-6
-5
-4
-3
-2
-1
0
0
20
40
60
80
100
120
140
160
180
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
- 1000
Fig. 12. Forward-Bias Safe Operating Area
f
= 1 MHz
Ciss
Capacitance - PicoFarads
10,000
- 100
R
DS(on)
Limit
25µs
100µs
1,000
Coss
I
D
- Amperes
- 10
1ms
-1
10ms
100ms
100
Crss
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
DC
10
0
-5
-10
-15
-20
-25
-30
-35
-40
- 0.1
-1
- 10
- 100
- 1000
V
DS
- Volts
V
DS
- Volts
© 2010 IXYS CORPORATION, All Rights Reserved
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