IRF612 datasheet, PDF - EEWORLD Datasheet

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IRF612: Description2A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size73KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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IRF612 Overview

2A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF612 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	LEADFORM OPTIONS ARE AVAILABLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	2.6 A
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	2.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	20 W
Maximum power dissipation(Abs)	43 W
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	30 ns
Maximum opening time (tons)	40 ns

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IRF612 Related Products

	IRF612	IRF610
Description	2A, 200V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it Rohs certified?	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
Other features	LEADFORM OPTIONS ARE AVAILABLE	LEADFORM OPTIONS ARE AVAILABLE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	2.6 A	3.3 A
Maximum drain current (ID)	2 A	2.5 A
Maximum drain-source on-resistance	2.4 Ω	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF	25 pF
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	20 W	20 W
Maximum power dissipation(Abs)	43 W	43 W
Maximum pulsed drain current (IDM)	8 A	10 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	30 ns	30 ns
Maximum opening time (tons)	40 ns	40 ns

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