Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | FCI / Amphenol |
| Objectid | 101432433 |
| package instruction | , |
| Reach Compliance Code | unknown |
| compound_id | 178162034 |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 2.6 A |
| Maximum drain current (ID) | 2.6 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Number of components | 1 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 43 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |