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IRHM7360SE

Description
Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size167KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

IRHM7360SE Overview

Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

IRHM7360SE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codenot_compliant
Other featuresAVALANCHE RATED; RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.21 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD-91224E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM7360SE
Radiation Level R
DS(on)
100K Rads (Si)
0.20Ω
IRHM7360SE
JANSR2N7391
400V, N-CHANNEL
REF:MIL-PRF-19500/661
RAD Hard HEXFET
TECHNOLOGY
®
I
D
QPL Part Number
22A JANSR2N7391
TO-254AA
International Rectifier’s RADHard
TM
HEXFET
®
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
22
14
88
250
2.0
±20
500
22
25
3.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
g
www.irf.com
1
06/03/14

IRHM7360SE Related Products

IRHM7360SE IRHM7360SEPBF
Description Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified? incompatible conform to
Maker Infineon Infineon
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code not_compliant compliant
Other features AVALANCHE RATED; RADIATION HARDENED AVALANCHE RATED; RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V
Maximum drain current (ID) 22 A 22 A
Maximum drain-source on-resistance 0.21 Ω 0.21 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 S-MSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 88 A 88 A
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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