IRHM7360SEUPBF datasheet, PDF - EEWORLD Datasheet

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IRHM7360SEUPBF: DescriptionPower Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size323KB，12 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRHM7360SEUPBF Overview

Power Field-Effect Transistor, 22A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRHM7360SEUPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Other features	HIGH RELIABILITY, RADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)	500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.21 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	88 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 90823A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

400Volt, 0.22Ω, MEGA RAD HARD HEXFET

Ω

International Rectifier’s RAD HARD technology

HEXFETs demonstrate excellent threshold voltage

stability and breakdown voltage stability at total

radiaition doses as high as 1x10

Rads(Si). Under

identical

pre- and post-irradiation test conditions, In-

ternational Rectifier’s RAD HARD HEXFETs retain

identical

electrical specifications up to 1 x 10

Rads

(Si) total dose. No compensation in gate drive circuitry

is required. These devices are also capable of surviv-

ing transient ionization pulses as high as 1 x 10

Rads

(Si)/Sec, and return to normal operation within a few

microseconds. Since the RAD HARD process utilizes

International Rectifier’s patented HEXFET technology,

the user can expect the highest quality and reliability

in the industry.

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy

pulse circuits in space and weapons environments.

IRHM7360

IRHM8360

N CHANNEL

MEGA RAD HARD

Product Summary

Part Number

IRHM7360

IRHM8360

DSS

400V

DS(on)

0.22Ω

22A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

250

2.0

±20

500

4.0

-55 to 150

Pre-Irradiation

IRHM7230, IRHM8230

Units

W/°C

V/ns

300 (0.063 in. (1.6mm) from case for 10s)

9.3 (typical)

www.irf.com

10/28/98

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