PD - 91224C
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7360SE
N-CHANNEL
HEXFET
®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
400Volt, 0.20Ω, (SEE) RAD HARD HEXFET
Ω
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Addi-
tionally, under
identical
pre- and post-radiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
Product Summary
Part Number
IRHM7360SE
BV
DSS
400V
R
DS(on)
0.20Ω
I
D
22A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
22
14
88
250
2.0
±20
500
22
25
Pre-Irradiation
IRHM7360SE
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
3.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
C
g
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1
10/13/98
IRHM7360SE Device
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
400
—
—
—
2.5
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.51
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
8.7
—
—
0.20
0.21
4.5
—
50
250
100
-100
185
35
100
28
97
120
72
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 14A
VGS = 12V, ID = 22A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 14A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 22A
VDS = Max Rating x 0.5
VDD = 200V, ID = 22A,
RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
nH
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
1000
460
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
22
88
1.4
720
14
Test Conditions
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
A
V
ns
µC
T
j
= 25°C, IS = 22A, VGS = 0V
Tj = 25°C, IF = 22A, di/dt
≤
100A/µs
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.50
0.21 —
—
48
°C/W
Test Conditions
Typical socket mount
2
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Radiation Characterstics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises 3 radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate voltage of 12 volts per note
5 and a V
DS
bias condition equal to 80% of the
device rated voltage per note 6. Post-irradiation lim-
its of the devices irradiated to 1 x 10
5
Rads (Si) are
presented in Table 1, column 1, IRHM7360SE. The
values in Table 1 will be met for either of the two low
IRHM7360SE Device
dose rate test circuits that are used. Both pre- and
post-irradiation performance are tested and speci-
fied using the same drive circuitry and test condi-
tions in order to provide a direct comparison. It should
be noted that at a radiation level of 1 x 10
5
Rads (Si)
the only parameter limit change is V
GSTh
minimum.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec ( See Table 2 ).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects
characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHM7360SE
100K Rads (Si)
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=14A
TC = 25°C, IS = 22A,V
GS
= 0V
Min
400
2.0
—
—
—
—
—
Max
—
4.5
100
-100
50
0.20
1.4
Table 2. High Dose Rate
Parameter
V
DSS
IPP
di/dt
L1
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max
Units
Test Conditions
—
— 320 —
— 320
V
Applied drain-to-source voltage during
gamma-dot
— 6.4 —
— 6.4
—
A
Peak radiation induced photo-current
—
— 16 —
—
2.3 A/µsec Rate of rise of photo-current
20 —
— 137 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
3x 10
5
Range
(µm)
~43
V
DS
Bias
(V)
325
V
GS
Bias
(V)
-5
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3
IRHM7360SE Device
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
5.0V
1
1
5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
0.1
0.1
20us PULSE WIDTH
T
J
= 150
o
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
22A
I
D
= 23A
I
D
, Drain-to-Source Current (A)
T
J
= 150
o
C
10
2.5
2.0
T
J
= 25
o
C
1.5
1
1.0
0.5
0.1
5.0
V
DS
= 50V
20µs PULSE WIDTH
6.2
7.3
8.5
9.7
10.8
12.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre -Irradiation
IRHM7360SE Device
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
20
22A
I
D
= 23A
16
V
DS
= 320V
V
DS
= 200V
V
DS
= 80V
C, Capacitance (pF)
6000
Ciss
4000
12
8
Coss
2000
Crss
4
0
1
10
100
0
0
40
80
120
FOR TEST CIRCUIT
SEE FIGURE 13
160
200
240
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
10
I
D
, Drain Current (A)
100
10us
100us
10
1ms
1
T
J
= 25
°
C
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
0.1
0.2
1
T
C
= 25
o
C
T
J
= 150
o
C
Single Pulse
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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