Depletion Mode
MOSFET
IXTA3N50D2
IXTP3N50D2
D
V
DSX
I
D(on)
R
DS(on)
=
>
500V
3A
1.5
N-Channel
G
S
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
V
DSX
V
GSX
V
GSM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
Continuous
Transient
T
C
= 25C
Maximum Ratings
500
20
30
125
- 55 ... +150
150
- 55 ... +150
V
V
V
W
C
C
C
°C
°C
Nm/lb.in
g
g
TO-220AB (IXTP)
G
DS
D (Tab)
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSX
V
GS(off)
I
GSX
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= - 5V, I
D
= 250A
V
DS
= 25V, I
D
= 250A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSX
, V
GS
= - 5V
V
GS
= 0V, I
D
= 1.5A, Note 1
V
GS
= 0V, V
DS
= 25V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
500
- 2.0
- 4.5
V
V
• Easy to Mount
• Space Savings
• High Power Density
Applications
•
•
•
•
•
•
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
100
nA
5
A
50
A
1.5
3
A
© 2017 IXYS CORPORATION, All Rights Reserved
DS100148D(4/17)
IXTA3N50D2
IXTP3N50D2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= 5V, V
DS
= 250V, I
D
= 1.5A
Resistive Switching Times
V
GS
=
5V, V
DS
= 250V, I
D
= 1.5A
R
G
= 3.3 (External)
V
GS
= -10V, V
DS
= 25V, f = 1MHz
V
DS
= 30V, I
D
= 1.5A, Note 1
Characteristic Values
Min.
Typ.
Max.
1.3
2.1
1070
102
24
27
71
56
42
40
5
20
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.00
C/W
C/W
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom
Side
TO-263 (IXTA) Outline
Safe-Operating-Area Specification
Symbol
SOA
Test Conditions
V
DS
= 400V, I
D
= 0.19A, T
C
= 75C, Tp = 5s
Characteristic Values
Min.
Typ.
Max.
75
W
TO-220 (IXTP) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
V
SD
t
rr
I
RM
Q
RM
I
F
= 3A, V
GS
= -10V, Note 1
I
F
= 3A, -di/dt = 100A/s
V
R
= 100V, V
GS
= -10V
Characteristic Values
Min.
Typ.
Max.
0.8
340
10.9
1.86
1.3
V
ns
A
μC
Pins:
1 - Gate
3 - Source
2 - Drain
Note 1. Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA3N50D2
IXTP3N50D2
Fig. 1. Output Characteristics @ T
J
= 25 C
3.0
V
GS
= 5V
3V
2V
1V
16
14
12
2V
0V
1.5
V
GS
= 5V
3V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
2.5
I
D
- Amperes
2.0
I
D
- Amperes
10
8
6
4
1V
1.0
-1V
0V
0.5
- 2V
- 3V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
2
0
0
5
10
15
20
-1V
- 2V
25
30
0.0
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
3.0
V
GS
= 5V
2V
1V
0V
2.0
1.E+00
o
Fig. 4. Drain Current @ T
J
= 25 C
V
GS
= - 2.50V
o
2.5
1.E-01
- 2.75V
- 3.00V
I
D
- Amperes
1.5
-1V
I
D
- Amperes
1.E-02
- 3.25V
- 3.50V
- 3.75V
1.E-03
1.0
- 2V
0.5
- 3V
0.0
0
1
2
3
4
5
6
7
1.E-04
1.E-05
- 4.00V
1.E-06
0
100
200
300
400
500
600
V
DS
- Volts
V
DS
- Volts
Fig. 5. Drain Current @ T
J
= 100 C
1.E+00
1.E+08
o
Fig. 6. Dynamic Resistance vs. Gate Voltage
∆
V
DS
= 350V - 100V
1.E+07
V
GS
= - 2.75V
1.E-01
- 3.00V
I
D
- Amperes
1.E-02
- 3.50V
R
O
- Ohms
- 3.25V
1.E+06
1.E+05
T
J
= 25 C
T
J
= 100 C
o
o
- 3.75V
1.E-03
1.E+04
- 4.00V
1.E-04
1.E+03
0
100
200
300
400
500
600
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
V
DS
- Volts
V
GS
- Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA3N50D2
IXTP3N50D2
Fig. 7. Normalized R
DS(on)
vs. Junction Temperature
2.4
V
GS
= 0V
2.0
I
D
= 1.5A
2.6
3.0
Fig. 8. R
DS(on)
Normalized to I
D
= 1.5A Value
vs. Drain Current
V
GS
= 0V
5V
T
J
= 125 C
o
R
DS(on)
- Normalized
R
DS(on)
- Normalized
2.2
1.6
1.8
1.2
1.4
T
J
= 25 C
o
0.8
1.0
0.4
-50
-25
0
25
50
75
100
125
150
0.6
0
1
2
3
4
5
6
7
8
9
10
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Input Admittance
10
9
8
7
6
5
4
3
2
1
0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
0
0
1
2
T
J
= 125 C
25 C
o
- 40 C
o
o
Fig. 10. Transconductance
6
V
DS
= 30V
5
25 C
o
o
V
DS
= 30V
T
J
= - 40 C
o
g
f s
- Siemens
4
125 C
I
D
- Amperes
3
2
1
3
4
5
6
7
8
9
10
V
GS
- Volts
I
D
- Amperes
1.4
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
10
9
V
GS
= -10V
Fig. 12. Forward Voltage Drop of
Intrinsic Diode
1.3
8
7
BV / V
GS(off)
- Normalized
1.2
I
S
- Amperes
V
GS(off)
@ V
DS
= 25V
6
5
4
3
2
1
T
J
= 25 C
o
1.1
BV
DSX
@ V
GS
= - 5V
1.0
T
J
= 125 C
o
0.9
0.8
-50
-25
0
25
50
75
100
125
150
0
0.4
0.5
0.6
0.7
0.8
0.9
T
J
- Degrees Centigrade
V
SD
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N50D2
IXTP3N50D2
Fig. 13. Capacitance
10,000
5
4
3
V
DS
= 250V
I
D
= 1.5A
I
G
= 10mA
Fig. 14. Gate Charge
f
= 1 MHz
Capacitance - PicoFarads
Ciss
1,000
2
V
GS
- Volts
1
0
-1
-2
-3
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
-4
-5
0
5
10
15
20
25
30
35
40
V
DS
- Volts
Q
G
- NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
100
Fig. 16. Forward-Bias Safe Operating Area
@ T
C
= 75 C
100
o
@ T
C
= 25 C
o
R
DS(on)
Limit
10
10
R
DS(on)
Limit
I
D
- Amperes
I
D
- Amperes
25μs
100μs
25μs
100μs
1
o
1
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.1
o
o
1ms
10ms
100ms
DC
1ms
T
J
= 150 C
T
C
= 75 C
Single Pulse
o
10ms
100ms
DC
100
1,000
0.1
Fig. 17. Maximum Transient Thermal Impedance
100
1,000
10
10.00
10
V
DS
- Volts
V
DS
- Volts
Fig. 17. Maximum Transient Thermal Impedance
2.00
1.00
Z
(th)JC
- k / W
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_3N50D2(3C)8-17-09-A
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