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IXTA180N10T7

Description
Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size194KB,5 Pages
ManufacturerIXYS
Environmental Compliance  
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IXTA180N10T7 Overview

Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN

IXTA180N10T7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeD2PAK
package instructionTO-263, 6 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)750 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)180 A
Maximum drain-source on-resistance0.0064 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263
JESD-30 codeR-PSFM-G6
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)450 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PreliminaryTechnical Information
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA180N10T7
V
DSS
I
D25
R
DS(on)
= 100
V
= 180
A
6.4 mΩ
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Transient
T
C
= 25° C
Package Current Limit, RMS
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
175° C, R
G
=3.3
T
C
= 25° C
Maximum Ratings
100
100
±
30
180
120
450
25
750
3
480
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
g
TO-263 (7-lead) (IXTA..7)
1
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
3
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°
C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±
20 V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 25 A, Note 1
T
J
= 150° C
Characteristic Values
Min. Typ.
Max.
100
2.5
4.5
±
200
5
250
5.4
6.4
V
V
nA
µA
µA
m
© 2006 IXYS CORPORATION All rights reserved
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