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2SC3052-T12-1F

Description
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
CategoryDiscrete semiconductor    The transistor   
File Size119KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

2SC3052-T12-1F Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

2SC3052-T12-1F Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1

2SC3052-T12-1F Related Products

2SC3052-T12-1F 2SC3052-12-1G 2SC3052-T12-1G 2SC3052-12-1E 2SC3052-12-1F 2SC3052-T12-1E
Description Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 250 400 400 150 250 150
JEDEC-95 code TO-236 TO-236 TO-236 TO-236 TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
Base Number Matches 1 1 1 1 1 1

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