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BU2523DF

Description
Bipolar Transistors;NPN;11A;800V;TO-3PML
CategoryDiscrete semiconductor   
File Size213KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

BU2523DF Overview

Bipolar Transistors;NPN;11A;800V;TO-3PML

isc
Silicon NPN Power Transistor
DESCRIPTION
·High
Switching Speed
·High
Voltage
·Built-in
Ddamper Ddiode
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
high resolution monitors.
BU2523DF
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
7.5
11
29
7
10
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.8
UNIT
K/W
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark

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Index Files: 1920  2744  6  2532  2798  39  56  1  51  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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